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ST Microelectronics
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| Part No. |
STP4NA40 STP4NA40FI
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| OCR Text |
... limited by t j max, d < 1%) 3mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 2.5 a electrical characteristics (t case = 25 o c unless otherwise specified) off sym... |
| Description |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
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| File Size |
401.25K /
10 Page |
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it Online |
Download Datasheet
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
IKA06N60T Q67040S4678
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| OCR Text |
...E, SWITCHING ENERGY LOSSES
0,3mj E ts* 0,2mJ E off 0,1mJ E on* 0,0mJ 50C 100C 150C
E, SWITCHING ENERGY LOSSES
0,3m J
E off
0,2m J E on * 0,1m J
0,0m J 200V
300V
400V
500V
TJ, JUNCTION TEMPERATURE Figure 15. Typ... |
| Description |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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| File Size |
351.04K /
14 Page |
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it Online |
Download Datasheet |
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Fairchild Semiconductor, Corp.
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| Part No. |
FDD3N40TM
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| OCR Text |
...itive avalanche energy (note 1) 3mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 30 0.24 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum l... |
| Description |
400V N-Channel MOSFET 2 A, 400 V, 3.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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| File Size |
724.69K /
9 Page |
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it Online |
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Spectrolab
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| Part No. |
WCA-2300-C3mj
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| OCR Text |
... r iption d e vice struct ure c 3mj a p ert u re are a 5. 1 mm 2 min i mu m a v er age e f fic i ency > 38.5 % t y p i ca l effic i enc y > 39 % r eco mmended opera t ing te mpe r atu r e < 110c ma ximu m p roces s te mpe ratu re < ... |
| Description |
Concentrator Solar Cell
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| File Size |
284.62K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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