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SamHop Microelectronics...
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| Part No. |
STUD3030NLS
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| OCR Text |
...tance, junction-to-ambient r jc 3 50 r ja /w c /w c 30 parameter symbol limit unit drain-s ource voltage v ds v g a te -s ourc e v olta ge 2...6ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =15v... |
| Description |
S uper high dense cell design for low R DS (ON).
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| File Size |
123.17K /
9 Page |
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it Online |
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Monolithic Power System...
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| Part No. |
MP171GJ
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| OCR Text |
...v.1.0 www.monolithicpower.com 3 10/23/2015 mps proprietary information. patent protec ted. unauthorized photocopy and duplication prohi...6ohm;250m a dip wurth 7447462102 1 r1 41.2k film resistor;1% 0603 yageo rc0603fr-0741k2l 1 r... |
| Description |
Small, Universal Input Non-Isolated Off-Line Regulator Evaluation Board
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| File Size |
172.10K /
7 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STU310DH
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| OCR Text |
... t g - 5 5 t o 1 7 5 c a 30 10 -3 0 - 1 5 - 6 1 pr od uc ts u mma ry v ds s i d r ds (o n) (m )m ax 30v 19a @v gs =1 0v @v gs =4 .5 v (n -c ...6ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =15v... |
| Description |
Dual E nhancementMode Field E ffect Transistor ( N and P Channel)
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| File Size |
287.89K /
11 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STM8362
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| OCR Text |
...-21 20 p-channel t c =70 c a 5.3 -4.6 1.28 w t c =70 c c/w 30 36 ver 1.1 so-8 1 4 3 2 1 d 2 d 2 d 1 d 1 g 2 s 2 g 1 s 1 5 6 7 8 green prod...6ohm total gate charge rise time turn-off delay time v ds =20v,i d =6.6a,v gs =10v fall time turn-on... |
| Description |
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
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| File Size |
153.18K /
11 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD20L01A
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| OCR Text |
...e temperature range t j , t stg 3 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy d t c =70...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
103.26K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD20L01
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| OCR Text |
...tance, junction-to-ambient r ja 3 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy d t c =70...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
120.09K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STM8820
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| OCR Text |
...ield effect transistor so-8 1 4 3 2 1 d 2 d 2 d 1 d 1 g 2 s 2 g 1 s 1 5 6 7 8 suface mount package. ver 1.0 esd protected.
symbol min typ ...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =5v,i d =0.7a... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
101.38K /
7 Page |
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it Online |
Download Datasheet |
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