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3.0ns Datasheet PDF File

For 3.0ns Found Datasheets File :: 2817 Search Time::1.078ms
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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM29U128IT KM29U128T
OCR Text	...ndershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns. 2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded....
Description	16M x 8 Bit NAND Flash Memory
File Size	479.05K / 26 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	HFA16TB120
OCR Text	... IRRM(typ.) = 5.8A trr(typ.) = 30ns di(rec)M/dt (typ.)* = 76A/s Description International Rectifier's HFA16TB120 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing te...
Description	Ultrafast/ Soft Recovery Diode Ultrafast, Soft Recovery Diode
File Size	130.09K / 6 Page	View it Online	Download Datasheet

				Integrated Device Techn... IDT[Integrated Device Technology] Integrated Device Technology, Inc.
Part No.	IDT7099S IDT7099S15G IDT7099S15GB IDT7099S15J IDT7099S15JB IDT7099S15PF IDT7099S15PFB IDT7099S20G IDT7099S20GB IDT7099S20J IDT7099S20JB IDT7099S20PF IDT7099S20PFB IDT7099S25G IDT7099S25GB IDT7099S25J IDT7099S25JB IDT7099S25PF IDT7099S25PFB IDT7099S30G IDT7099S30GB IDT7099S30J IDT7099S30JB IDT7099S30PF IDT7099S30PFB
OCR Text	...output times -- Military: 20/25/30ns (max.) -- Commercial: 15/20/25ns (max.) * Low-power operation -- IDT7099S Active: 900 mW (typ.) Standby: 50 mW (typ.) * Architecture based on Dual-Port RAM cells -- Allows full simultaneous access from b...
Description	HIGH-SPEED 4K x 9 SYNCHRONOUS DUAL-PORT RAM JFET-Input Operational Amplifier 8-PDIP -40 to 85 JFET-Input Operational Amplifier 8-SOIC 0 to 70 JFET-Input Operational Amplifier 8-SOIC -40 to 85 4K X 9 MULTI-PORT SRAM, PQFP80
File Size	131.68K / 9 Page	View it Online	Download Datasheet

				IDT[Integrated Device Technology]
Part No.	IDT71024S70 IDT71024S70TY IDT71024S70Y
OCR Text	...e pin which operates as fast as 30ns, with address access times as fast as 70ns available. All bidirectional inputs and outputs of the IDT71024 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry...
Description	CMOS STATIC RAM 1 MEG (128K x 8-BIT)
File Size	58.59K / 7 Page	View it Online	Download Datasheet

				IDT[Integrated Device Technology]
Part No.	IDT71028S70 IDT71028S70Y
OCR Text	...e pin which operates as fast as 30ns, with address access times as fast as 70ns. All bidirectional inputs and outputs of the IDT71028 are TTLcompatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, r...
Description	CMOS STATIC RAM 1 MEG (256K x 4-BIT)
File Size	57.12K / 7 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4C560838C-TCD3 K4C561638C-TCD3 K4C561638C-TCD4000 K4C561638C-TCDA K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD4
OCR Text	... 2mA 3mA D3 (333Mbps) 6.5ns 6ns 30ns 26ns 290mA 2mA 3mA * Fully Synchronous Operation Double Data Rate (DDR) Data input/output are synchronized with both edges of DQS. Differential Clock (CK and CK)inputs CS, FN and all address input sig...
Description	256Mb Network-DRAM
File Size	877.29K / 42 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S161622E-TC70 K4S161622E DSK4S161622E K4S161622E-TC10 K4S161622E-TC55 K4S161622E-TC60 K4S161622E-TC80 DS_K4S161622E
OCR Text	...als are changed one time during 30ns CKEVIH(min), CLKVIL(max), tCC = Input signals are stable CKEVIL(max), tCC = 15ns CKE & CLKVIL(max), tCC = CKEVIH(min), CSVIH(min), tCC = 15ns Input signals are changed one time during 30ns CKEVIH(min),...
Description	1M x 16 SDRAM
File Size	671.65K / 42 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S161622H-TC70 K4S161622H-TC60 K4S161622H-TC55 K4S161622H-TC80 K4S161622H K4S161622H-TC600
OCR Text	...als are changed one time during 30ns CKEVIH(min), CLKVIL(max), tCC = Input signals are stable CKEVIL(max), tCC = 10ns CKE & CLKVIL(max), tCC = CKEVIH(min), CSVIH(min), tCC = 10ns Input signals are changed one time during 30ns CKEVIH(min),...
Description	16Mb H-die SDRAM Specification
File Size	106.31K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 K4S643232H-TC_L55 K4S643232H-TC_L60 K4S643232H-TC_L70 K4S643232H-TC50 K4S643232H-TC55 K4S643232H-TC60 K4S643232H-TL50 K4S643232H-TL55 K4S643232H-TL60 K4S643232H-TC/L50 K4S643232H-TC/L55 K4S643232H-TC/L60 K4S643232H-TC/L70
OCR Text	...als are changed one time during 30ns CKE VIH(min), CLK VIL(max), tCC = Input signals are stable CKE VIL(max), tCC = 10ns CKE VIL(max), tCC = CKE VIH(min), CS VIH(min), tCC = 10ns Input signals are changed one time during 30ns CKE V...
Description	64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz 64Mb H-die (x32) SDRAM Specification
File Size	115.81K / 12 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. Linear Technology, Corp. LINER[Linear Technology]
Part No.	LT1812 LT1812CS8 LT1812IS8 1812F LT1812CS5 LT1812IS6 LT1812CS6 LT1812IS5
OCR Text	...3.5V Minimum Input CMR, VS = 5V 30ns Settling Time to 0.1%, 5V Step Specified at 5V, Single 5V Supplies Operating Temperature Range: - 40C to 85C The LT(R)1812 is a low power, high speed, very high slew rate operational amplifier with ex...
Description	3mA, 100MHz, 750V/us Operational Amplifier with Shutdown 3毫安00MHz的，750V/us运算放大器具有关 CAP 330PF 250VAC CERAMIC Y2/X1 OP-AMP, 2000 uV OFFSET-MAX, 100 MHz BAND WIDTH, PDSO8 3mA/ 100MHz/ 750V/us Operational Amplifier with Shutdown From old datasheet system
File Size	202.38K / 12 Page	View it Online	Download Datasheet

For 3.0ns Found Datasheets File :: 2817 Search Time::1.078ms
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