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T1510 KS8995M FX909AD5 CXA1268P RLZ13B 1N4999 EA1532A 2SA133
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For 3-row Found Datasheets File :: 23576    Search Time::1.906ms    
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    INTEGRATED SILICON SOLUTION INC
Part No. IS42SM32400E-75EBLI
OCR Text ...ge programmable cas latency: 2, 3 ? programmable burst length: 1, 2, 4, 8, and full ? page programmable burst sequence: ? sequential and...row addressing a0-a11 a0-a11 a0-a11 column addressing a0-a9 a0-a8 a0-a7 bank addressing ba0, ba1 ba...
Description 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90

File Size 764.69K  /  26 Page

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    HYS72T64001HP

Qimonda AG
Part No. HYS72T64001HP
OCR Text 3.7]?a hys72t64001hp?[3s/3.7]?a hys72t64020hp?[3s/3.7]?a 240-pin registered ddr2 sdram modules ddr2 sdram rdimm sdram rohs compilant inter...row precharge time t rp 15 ns min. row active time t ras 45 ns min. row cycle time t rc 60 ns in...
Description 240-Pin Registered DDR2 SDRAM Modules

File Size 1,025.25K  /  53 Page

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Part No. K4E151611C-TC50
OCR Text ...power supply voltage (+5.0v or +3.3v), refresh cycle (1k ref. or 4k ref.), access time (-45, -5 0 or -6 0 ), power consumption(normal or lo...row address buffer col. address buffer row decoder column decoder lower data out buffer ras ucas lca...
Description 1M X 16 EDO DRAM, 50 ns, PDSO44

File Size 558.18K  /  35 Page

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    HYB18TC256800AF-3.7

QIMONDA AG
Part No. HYB18TC256800AF-3.7
OCR Text ... internet data sheet rev. 1.3 november 2007 date: 2007-11-23 internet data sheet hy[b/i]18tc256[80/16]0af 256-mbit double-data-rat...row, column and bank address information in a ras -cas multiplexing style. the ddr2 device operates...
Description 32M X 8 DDR DRAM, 0.5 ns, PBGA60

File Size 1,885.92K  /  60 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HMT325S6BFR6C-H9
OCR Text ...iricaion feb.2010 preliminary 0.3 add supported cl5 jun. 2010 0.4 dimm outline corrected jul. 2010 b48614/178.104.2.80/2010-07-13 16:20 a ...row address a0-a13 a0-a13 a0-a14 a0-a14 column address a0-a9 a0-a9 a0-a9 a0-a9 bank address ba0-ba2 ...
Description 256M X 64 DDR DRAM MODULE, DMA204

File Size 474.71K  /  54 Page

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    NANYA TECHNOLOGY CORP
Part No. NT5DS128M4BT-6K
OCR Text ...ency: 2 / 2.5 (6k & 75b), 2.5 / 3 (6k & 5t) ? auto precharge option for each burst access ? auto refresh and self refresh modes ?7.8 s maxi...row to be accessed. the address bits registered coincident with the read or write command are used...
Description 128M X 4 DDR DRAM, 0.7 ns, PDSO66

File Size 2,500.58K  /  80 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY5DU561622ELTP-L
OCR Text ... 3 1 hy5du56822e(l)tp hy5du561622e(l)tp description the hy5du56822e(l)tp and hy5du561622e (l)tp are a 268,435...row and column address table items 32mx8 16mx16 organization 8m x 8 x 4banks 4m x 16 x 4banks row ad...
Description 16M X 16 DDR DRAM, 0.75 ns, PDSO66

File Size 235.08K  /  29 Page

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    Mosel Vitelic Corp
Part No. V58C2256164S V58C2256164SXT6 V58C2256164SXT7 V58C2256164SXT75 V58C2256164SXT8 V58C2256804SXT8 V58C2256404SXT8
OCR Text ...supports pc2700 module with 2.5-3-3 timing ddr 266a supports pc2100 module with 2-2-2 timing ddr 266b supports pc2100 module with 2.5-3-3 ti...row address strobe cas column address strobe we write enable dqs (udqs, ldqs) data strobe (bidirecti...
Description HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
High performance 2.5V 128MB DDR SDRAM

File Size 800.32K  /  61 Page

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Part No. TC59SM808CMBL-80
OCR Text ... cc6 self-refresh current (max) 3 ma 3 ma 3 ma ? 6lqjoh srzhu vxsso\ ri 9 9 ? 8s wr 0+] forfn iuhtxhqf\ ? 6\qfkurqrxv rsh...row address strobe cas column address strobe we write enable dqm (tc59sm808/m804) udqm/ldqm (tc59sm8...
Description 32M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA60

File Size 2,246.80K  /  50 Page

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