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Advanced Power Electronics
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| Part No. |
AP4407GM-HF-3
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| OCR Text |
...oltage continuous drain current 3 continuous drain current 3 pulsed drain current 1 -55 to 150 c operating junction te...10a t a =25 o c 0.60 0.80 1.00 1.20 1.40 1.60 1.80 -50 0 50 100 150 t j , junction temperature ( o ... |
| Description |
P-channel Enhancement-mode Power MOSFET
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| File Size |
143.96K /
5 Page |
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Advanced Power Electronics
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| Part No. |
AP4800GYT-HF-3
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| OCR Text |
3 adva nced power electronics corp. 1/5 ap4800gyt-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com n-channel enhanc...10a - 10 13 mw v gs =4.5v, i d =8a - 18.4 26 mw v gs(th) gate th... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
75.42K /
5 Page |
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it Online |
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Infineon
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| Part No. |
GP07N120
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| OCR Text |
3 sep 07 fast igbt in n p t - technolo g y ? lo w e r e off c o m par ed to pr ev ious g ener ati on ? ...10a 15a 20a 25a 30a 35 a t c =110c t c =80 c i c , collector current 1v 10v 100v 1000v 0. 1a 1a... |
| Description |
SGP07N120
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| File Size |
434.59K /
11 Page |
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it Online |
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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
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| Part No. |
GE6062 GE6061 GE6060
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| OCR Text |
...n equipment. device circuit (to-3) dimensions am ik inchcs and (miu.imiteh?) 0.545(21 4;'| t max i dia h ?,?,. t ??'? 3mi9.m) max seating pl...10a,vce=5v) (lc = 15a, vce = 5v) (lc = 20a, vce = 5v) collector-emitter saturation voltage (lc = 10a... |
| Description |
NPN POWER DARLINGTON TRANSISTORS
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| File Size |
90.44K /
2 Page |
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STMICROELECTRONICS[STMicroelectronics]
意法半导
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| Part No. |
STSJ100NHS3LL 100HS3L-
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| OCR Text |
...Tape & reel
July 2006
Rev 3
1/12
www.st.com 12
Contents
STSJ100NHS3LL
Contents
1 2 Electrical ratings . . . . . . . . . ...10A VGS= 4.5V, ID= 10A VGS= 10V, ID= 10A @125C VGS= 4.5V, ID= 10A @125C 1 Min. 30 500 Typ. Max. Unit... |
| Description |
N-channel 30V - 0.0032ohm - 20A - PowerSO-8 STripFET III Power MOSFET plus monolithic schottky
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| File Size |
272.50K /
12 Page |
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STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
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| Part No. |
STW20NM60
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| OCR Text |
...ND HIGH MANUFACTURING YIELDS
3 2 1
TO-247
DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Mul...10A Min. 3 Typ. 4 0.26 Max. 5 0.29 Unit V
DYNAMIC
Symbol gfs (1) Ciss Coss Crss Coss eq. (2) RG... |
| Description |
N-CHANNEL Power MOSFET
N-CHANNEL 600V - 0.26ohm - 20A TO-247 MDmesh?Power MOSFET
N-CHANNEL 600V - 0.26ohm - 20A TO-247 MDmesh⑩Power MOSFET
N-CHANNEL 600V - 0.26 OHM - 20A TO-247 MDMESH POWER MOSFET
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| File Size |
255.10K /
8 Page |
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TY Semiconductor Co., Ltd
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| Part No. |
AOB10T60P
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| OCR Text |
... q g,typ 26nc e oss @ 400v 3.5 m j applications 100% uis tested 100% r g tested symbol v ds v gs i dm l=1mh i ar e ar e as t j , ...10a,di/dt=100a/ m s,v ds =100v turn-off delaytime turn-off fall time v gs =10v, v ds =300v, i d =10a... |
| Description |
Trench Power AlphaMOS-II technology
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| File Size |
1,147.02K /
7 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE391 NTE390
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| OCR Text |
...t Gain Bandwidth Product: hfe = 3 Min @ IC = 500mA, f = 1MHz Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . ....10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
| Description |
Silicon Complementary Transistors General Purpose
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| File Size |
20.26K /
2 Page |
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it Online |
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Price and Availability
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