26.0a pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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26.0a Datasheet PDF File

For 26.0a Found Datasheets File :: 8322 Search Time::3.469ms
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				FAIRCHILD[Fairchild Semiconductor]
Part No.	HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS9A
OCR Text	...42 35 TYP 1.8 2.1 5.1 7.7 23 30 26 21 130 60 160 120 MAX 100 3.0 2.1 2.4 6.0 100 28 37 160 80 200 200 UNITS V A mA V V V nA A A V nC nC ns n...0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn...
Description	14A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode 14 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diode 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 7A I(C) \| TO-263AB
File Size	158.34K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGT1S7N60B3S HGTD7N60B3S HGTP7N60B3 FN4412
OCR Text	...15V VGE = 20V - 7.7 23 30 26 21 130 60 72 160 120 28 37 160 80 200 200 V nC nC ns ns ns ns J J J Current Turn-On Delay Time C...0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn...
Description	From old datasheet system 14A 600V UFS Series N-Channel IGBTs 14A, 600V, UFS Series N-Channel IGBTs
File Size	91.85K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2101
OCR Text	...ine HVDCMOS 4.0 m 168 67 X 91 X 26 (mil) Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation Method of Saw Method of Die Bond Wire Bond Leadframe Material Width Spacing T...
Description	HIGH AND LOW SIDE DRIVER
File Size	357.98K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IR2112
OCR Text	...5 16 17 18 19 20 21 22 23 24 25 26 27 9.5 -- -- -- -- -- -- -- -- -- 7.4 7.0 7.6 7.2 200 420 Value Typ. Max. Units Test Conditions -- --...0A IO = 0A VB = VS = 600V VIN = 0V or VDD VIN = 0V or VDD VIN = 0V or VDD VIN = VDD VIN = 0V To O...
Description	HIGH AND LOW SIDE DRIVER
File Size	379.67K / 14 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2113
OCR Text	...5 16 17 18 19 20 21 22 23 24 25 26 27 9.5 -- -- -- -- -- -- -- -- -- 7.5 7.0 7.4 7.0 2.0 2.0 Value Typ. Max. Units Test Conditions -- --...0A IO = 0A VB = VS = 600V VIN = 0V or VDD VIN = 0V or VDD VIN = 0V or VDD VIN = VDD VIN = 0V To O...
Description	HIGH AND LOW SIDE DRIVER
File Size	388.64K / 14 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2117
OCR Text	...ine HVDCMOS 4.0 m 114 70 X 77 X 26 (mil) Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation Method of Saw Method of Die Bond Wire Bond Leadframe Material Width Spacing T...
Description	SINGLE CHANNEL DRIVER
File Size	219.94K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IR2127
OCR Text	...ine HVDCMOS 4.0 m 206 77 X 85 X 26 (mil) Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation Method of Saw Method of Die Bond Wire Bond Leadframe Material Width Spacing T...
Description	CURRENT SENSING SINGLE CHANNEL DRIVER
File Size	187.77K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IR2153
OCR Text	...ne HVDCMOS 4.0 m 231 68 X 101 X 26 (mil) Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation Method of Saw Method of Die Bond Wire Bond Leadframe Material Width Spacing T...
Description	SELF-OSCILLATING HALF-BRIDGE DRIVER
File Size	209.66K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7204 IRF7204TR
OCR Text	...-- VGS = -10V 14 30 VDD = -10V 26 60 I D = -1.0A ns 100 150 R G = 6.0 68 100 RD = 10 D 2.5 4.0 860 750 230 --- nH --- --- --- --- pF Between lead,6mm(0.25in.) from package and center of die contact VGS = 0V VDS = -10V = 1.0M...
Description	TRI N PLUG M 0-48 NO SEAL Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A) -20V Single P-Channel HEXFET Power MOSFET in a SO-8 package
File Size	141.26K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7311
OCR Text	...TSTG Maximum 20 12 6.6 5.3 26 2.5 2.0 1.3 100 4.1 0.20 5.0 -55 to + 150 Units V Pulsed Drain Current Continuous Source Current (...0A 0.030 0.046 VGS = 2.7V, ID = 5.2A --- --- V VDS = V GS, ID = 250A 20 --- S V DS = 10V, ID = 6....
Description	HEXFET Power MOSFET
File Size	154.76K / 7 Page	View it Online	Download Datasheet

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