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    FDP090N10

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Fairchild Semiconductor
Part No. FDP090N10
OCR Text ...te to Body Leakage Current ID = 250a, VGS = 0V, TC = 25oC ID = 250a, Referenced to 25oC VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TC = 150o...300 1.25 - A A V ns nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction te...
Description N-Channel PowerTrench? MOSFET 100V, 75A, 9mΩ
N-Channel PowerTrench㈢ MOSFET 100V, 75A, 9mヘ

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    IRFP26N60L

IRF[International Rectifier]
Part No. IRFP26N60L
OCR Text ...V Conditions VGS = 0V, ID = 250a V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 16A V VDS = VGS, ID = 250a A mA nA VDS = 600V, VGS ...300 400 500 600 700 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 5. ...
Description SMPS MOSFET

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOD5N50
OCR Text ...n-source breakdown voltage i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c body diode reverse recovery charge i f =5a,di/dt=100...300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal imped...
Description 500V,5A N-Channel MOSFET

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    RF1S70N03SM RFP70N03 FN3404

Intersil Corporation
Part No. RF1S70N03SM RFP70N03 FN3404
OCR Text ...S(TH) IDSS TEST CONDITIONS ID = 250a, VGS = 0V (Figure 10) VGS = VDS, ID = 250a (Figure 9) VDS = 30V, VGS = 0V VDS = 30V, VGS = 0V, TC = 150...300 100s IAS, AVALANCHE CURRENT (A) 300 IDM STARTING TJ = 25oC STARTING TJ = 150oC 100 ID, DRAIN ...
Description From old datasheet system
70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs

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    Intersil
Part No. ITF87008DQT FN4814
OCR Text ...VGS(TH) rDS(ON) VGS = VDS, ID = 250a Figure 10 ID = 7.0A, VGS = 4.5V Figures 8,9 ID = 2.0A, VGS = 4.0V Figure 8 ID = 2.0A, VGS = 2.5V Figure...300 160 pF pF pF Qg(TOT) Qg(2) Qg(TH) Qgs Qgd VGS = 0V to 4.5V VGS = 0V to 2.0V VGS = 0V to 0.5V VDD...
Description 7.0A, 20V, 0.023 Ohm, Dual N-Channel, 2.5V Specified Power MOSFET
From old datasheet system

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    IRF[International Rectifier]
Part No. CPV363MF CPV363
OCR Text ...ions 600 -- -- V VGE = 0V, IC = 250a -- 0.69 -- V/C VGE = 0V, IC = 1.0mA -- 1.5 1.6 IC = 8.7A VGE = 15V -- 1.9 -- V IC = 16A See Fig. 2, 5 -...300 0.44 2.0 2.4 25 21 280 550 3.4 670 100 10 42 80 3.5 5.6 80 220 180 116 Max. Units Conditions 30 ...
Description IGBT SIP MODULE Fast IGBT

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    AOD5N50

Alpha & Omega Semiconductors
Part No. AOD5N50
OCR Text ...n-source breakdown voltage i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c body diode reverse recovery charge i f =5a,di/dt=100...300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal imped...
Description 500V,5A N-Channel MOSFET

File Size 281.66K  /  6 Page

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    IRG4PC60U-PPBF

International Rectifier
Part No. IRG4PC60U-PPBF
OCR Text ... Conditions ---V VGE = 0V, IC = 250a ---V VGE = 0V, IC = 1.0A ---- V/C VGE = 0V, IC = 1.0mA 2.0 IC = 40A VGE = 15V ---IC = 75A See Fig.2, 5 ...300 160 2.6 13 5860 370 75 Max. Units Conditions 320 IC = 40A 46 nC VCC = 480V See Fig. 8 120 VGE = ...
Description INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

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    IRFF9130 FN2216

INTERSIL[Intersil Corporation]
Part No. IRFF9130 FN2216
OCR Text ...TEST CONDITIONS VGS = 0V, ID = -250a, (Figure 10) VGS = VDS, ID = -250a VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = ...300 100 5.0 MAX -4.0 -25 -250 100 0.300 60 140 140 140 45 - UNITS V V A A A nA S ns ns ns ns ...
Description From old datasheet system
-6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET

File Size 325.67K  /  7 Page

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    HUF75321D3 HUF75321D3S 75321D

FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75321D3 HUF75321D3S 75321D
OCR Text ...n Current BVDSS IDSS ID = 250a, VGS = 0V (Figure 11) VDS = 50V, VGS = 0V VDS = 45V, VGS = 0V, TC = 150oC 55 - - 1 250 100 ...300 300 IAS, AVALANCHE CURRENT (A) T J = MAX RATED T C = 25 oC 100 If R = 0 tAV = (L)(IAS)/(1....
Description 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

File Size 222.71K  /  10 Page

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