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250 670 Datasheet PDF File

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				乐山无线电股份有限公 LRC[Leshan Radio Company]
Part No.	MUN5236DW1T1 MUN5237DW1T1 MUN5216DW1T1 MUN5216 MUN5212DW1T1 MUN5214DW1T1 MUN5211DW1T1 MUN52XXDW1T1 MUN5213DW1T1 MUN5215DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1
OCR Text	...See Page 2) Symbol PD Max 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) -55 to +150 Unit mW mW/C C/W C/W C DEVICE MARKING INFORMATION See specific marking inform...
Description	Dual Bias Resistor Transistors
File Size	197.75K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	SN54LS221J SN54LS221 SN74LS221N 74LS221N SN74LS221D
OCR Text	...1.77 INCHES MIN MAX 0.740 0.250 0.145 0.015 0.040 0.770 0.270 0.175 0.021 0.070 2.54 BSC 1.27 BSC 0.21 2.80 7.50 0 0.51 0.38 3.30 7.74 10 1.01 0.100 BSC 0.050 BSC 0.008 0.110 0.295 0 0.020 0.015 0.130 0.305 10 0.040 -A16 9 C...
Description	DUAL MONOSTABLE MULTIVIBRATORS WITH SCHMITT-TRIGGER INPUTS
File Size	193.58K / 7 Page	View it Online	Download Datasheet

				http:// WINBOND[Winbond] Winbond Electronics, Corp.
Part No.	W24256 W24256-70 W24256-70L W24256-70LL W24256Q-70L W24256S-70L W24256Q-70LL W24256S-70LL
OCR Text	...max.) * Active :300 mW Standby :250 W * Single 5V power supply * Fully static operation * All inputs and outputs directly TTL compatible ...670 0.090 Min. Nom. Max. 5.33 0.25 3.81 0.41 1.47 0.20 3.94 0.46 1.52 0.25 37.08 14.99 13.72 2.2...
Description	32K X 8 CMOS STATIC RAM From old datasheet system BOX 3.05X1.51X1.05 W/2 BTNS GRY 32K X 8 STANDARD SRAM, 70 ns, PDSO28 32K X 8 CMOS STATIC RAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
File Size	145.88K / 10 Page	View it Online	Download Datasheet

				http:// SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
Part No.	C67078-A1309-A3 BUZ80A BUZ80AC67078-S1309-A3
OCR Text	... voltage drain current IDSS 250 1000 A VDS = 800 V, VGS = 0 V, Tj = 25 C VDS = 800 V, VGS = 0 V, Tj = 125 C Gate-source leakage c...670.0ns p ID 10 1 1 s 10 s ZthJC 10 0 DS (o n) 10 0 = V DS / I ...
Description	From old datasheet system SIPMOS ? Power Transistor SIPMOS Power Transistor (N channel Enhancement mode) TRANSISTOR TO 220 MOSFET N KANAL
File Size	176.70K / 9 Page	View it Online	Download Datasheet

				MAXIM[Maxim Integrated Products]
Part No.	MAX1677 MAX1677EEE
OCR Text	...PWM mode N-channel PFM mode 550 250 40 240 80 200 CONDITIONS MIN TYP 0.22 0.4 670 350 90 300 85 MAX 0.5 1.0 800 450 140 360 90 400 UNITS mA mA kHz % kHz MAX1677 3 _____________________________________________________________________...
Description	Compact, High-Efficiency, Dual-Output Step-Up and LCD Bias DC-DC Converter
File Size	199.82K / 16 Page	View it Online	Download Datasheet

				AD[Analog Devices]
Part No.	AD7873 AD7873ACP AD7873ACPZ AD7873ACPZ3 AD7873ARQ AD7873ARU AD7873ARUZ AD7873BCP AD7873BRQ
OCR Text	...t Conditions/Comments ISOURCE = 250 A; VCC = 2.2 V to 5.25 V ISINK = 250 A 100 k pull-up; ISINK = 250 A VCC - 0.2 V min 0.4 V max 0.4 V m...670 170 150 580 1 1.368 2.412 3.6 DCLK cycles max DCLK cycles min kSPS max V min/max A max A typ A t...
Description	Touch Screen Digitizer
File Size	462.54K / 28 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFP22N60K
OCR Text	... 250A 50 A VDS = 600V, VGS = 0V 250 A VDS = 480V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions --- S VDS = 50V...670 1010 TJ = 125C di/dt = 100A/s --- 7.2 11 TJ = 25C C --- 8.5 13 TJ = 125C --- 26 39 A TJ = 25C I...
Description	SMPS MOSFET MOSFET的开关电
File Size	169.46K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPH40FD2
OCR Text	...Voltage Collector Current -- -- 250 A VGE = 0V, V CE = 1200V -- -- 1000 VGE = 0V, V CE = 1200V, T J = 150C Diode Forward Voltage Drop -- 2.6...670 930 15 13 1200 75 15 63 106 4.5 6.2 140 335 133 85 Max. Units Conditions 67 IC = 17A 16 nC VCC =...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V @Vge=15V Ic=17A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A)
File Size	380.38K / 8 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF1601B 1601B
OCR Text	...temperature *1 Ratings -8 -8 250 -0.6 1.5 1.2 175 -65 to +175 Unit V V mA mA mA W C C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol V...670 0.664 0.657 0.645 0.632 0.620 0.608 S11 Angle(deg.) -56.8 -69.4 -82.1 -94.7 -107.4 -120.0 -132.7...
Description	From old datasheet system MICROWAVE POWER GaAs FET
File Size	25.18K / 3 Page	View it Online	Download Datasheet

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