Part Number Hot Search : 
RXE110 LS7642FO SP5511 APA2614 PM45502C 1N4007GP TC358760 M1BS9HA
Product Description
Full Text Search
  22-26ghz Datasheet PDF File

For 22-26ghz Found Datasheets File :: 901    Search Time::1.953ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    BFR360L3

Infineon Technologies AG
Part No. BFR360L3
OCR Text ...: 1.0 dB at 1.8 GHz 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR360L3 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-...
Description RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Oscillators and VCO Modules up to 4GHz

File Size 100.93K  /  4 Page

View it Online

Download Datasheet





    BFP136 BFP136W

Infineon Technologies AG
Part No. BFP136 BFP136W
OCR Text ...or high reliability 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP136W Maximum Ratings Parameter Marking PAs 1=E Pin Configuration 2=C 3=E 4=B Package SOT343 U...
Description RF-Bipolar - For power amplifier in DECT and PCN systems
NPN Silicon RF Transistor

File Size 77.85K  /  7 Page

View it Online

Download Datasheet

    BFP180W

Infineon Technologies AG
Part No. BFP180W
OCR Text ...r) at collector currents from 0.2 mA to 2.5 mA f T = 7 GHz F = 2.1 dB at 900 MHz 3 4 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS 1T is measured on the collecto...
Description NPN Silicon RF Transistor

File Size 114.58K  /  7 Page

View it Online

Download Datasheet

    BFP182R

Infineon Technologies AG
Part No. BFP182R
OCR Text ... 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the ...
Description NPN Silicon RF Transistor
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA

File Size 86.41K  /  7 Page

View it Online

Download Datasheet

    BFP182W

Infineon Technologies AG
Part No. BFP182W
OCR Text ... 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP182W Maximum Ratings Parameter Marking RGs 1=E Pin Configuration 2=C 3...
Description RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA

File Size 76.44K  /  7 Page

View it Online

Download Datasheet

    INFINEON[Infineon Technologies AG]
Part No. BFR183T
OCR Text 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to ...
Description NPN Silicon RF Transistor

File Size 79.60K  /  7 Page

View it Online

Download Datasheet

    INFINEON[Infineon Technologies AG]
Part No. BFR183W
OCR Text 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to ...
Description RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers

File Size 78.50K  /  7 Page

View it Online

Download Datasheet

    CHR2295 CHR2295-99F_00 CHR2295-99F/00

United Monolithic Semiconductors GmbH
UMS[United Monolithic Semiconductors]
Part No. CHR2295 CHR2295-99F_00 CHR2295-99F/00
OCR Text ...umption, 120mA@3.5V Chip size : 2.49 X 1.97 X 0.10 mm Gc_channel_sup_rf+ Gc_channel inf_rf- Gc_channel_inf_rf+ Gc_channel_sup_rf- -4.00 -8.00 -12.00 -16.00 -20.00 -24.00 22.5 23.5 24.5 25.5 26.5 27.5 28.5 29.5 ...
Description 24-30GHz Integrated Down Converter 24 - 30GHz的集成下变频

File Size 143.39K  /  6 Page

View it Online

Download Datasheet

    LX5506B LX5506BLQ

MICROSEMI[Microsemi Corporation]
Part No. LX5506B LX5506BLQ
OCR Text ...e-Polarity Voltage Supply EVM ~ 2.5% at Pout=+18dBm, 64QAM/ 54Mbps OFDM (3.3V) Power Gain ~ 25dB at 5.25GHz & Pout=+18dBm Power Gain ~ 21dB at 5.85GHz & Pout=+18dBm P1dB ~ +26dBm across 5.15 - 5.85 GHz Total Current ~ 170mA for Pout=+18dBm ...
Description InGaP HBT 4 6GHz Power Amplifier
From old datasheet system
InGaP HBT 4 6GHz Power Amplifier

File Size 195.65K  /  7 Page

View it Online

Download Datasheet

    SZM-2066Z

http://
Sirenza Microdevices, Inc
Part No. SZM-2066Z
OCR Text ... and 802.11b/g equipment in the 2.4-2.7 GHz bands. It can run from a 3V to 5V supply. The external output match and bias adjustability allows load line optimization for other applications or over narrower bands. It features an output power ...
Description 2.4-2.7GHz 2W Power Amplifier

File Size 637.60K  /  13 Page

View it Online

Download Datasheet

For 22-26ghz Found Datasheets File :: 901    Search Time::1.953ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of 22-26ghz

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.68042707443237