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永盛国际集团
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| Part No. |
BUT11AF
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| OCR Text |
...2.5a,i b 1 =-i b 2 =0.5a,v c c =150v 1.0 s symbol parameter conditions min max unit v c e s m collector-emitter voltage peak value v b e = ...100ma v l = 25mh v c e s a t collector-emitter saturation voltages i c = 2.5a; i b = 0.5a 1.5 v v... |
| Description |
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
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| File Size |
69.37K /
1 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
ARF461A ARF461B
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| OCR Text |
...0 GAIN (dB) 15
Class C VDD = 150v
CAPACITANCE (pf)
10 5 0 30
P
45
E R
Pout = 150W
IM L
A IN
5000 1000 500 100 50
...100ma ZOL - Conjugate of optimum load for 150 Watts output at Vdd = 250V
050-5987 Rev A 7-2001
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| Description |
N-CHANNEL ENHANCEMENT MODE
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| File Size |
87.89K /
4 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE71
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| OCR Text |
.... . . . . . . . . . . . . . . . 150v Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....100ma IEBO ICEX VEB = 10V VCE = 150v, VBE = -1.5V VCE = 150v, VBE = -1.5V, TC = +150C ON Characteris... |
| Description |
Silicon NPN Transistor High Current Amp, Fast Switch
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| File Size |
22.23K /
2 Page |
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it Online |
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ZETEX[Zetex Semiconductors]
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| Part No. |
ZXTN25050DFHTA
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| OCR Text |
150v BVCEO > 50V BVECO > 5V IC(cont) = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m PD = 1.25W
Description
Advanced process capability and pac...100ma (*) IC = 1A, IB = 10mA (*) IC = 2A, IB = 40mA (*) IC = 3,5A, IB = 175mA (*) IC = 4A, IB = 400m... |
| Description |
50V, SOT23, NPN medium power transistor
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| File Size |
386.25K /
6 Page |
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it Online |
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Price and Availability
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