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  150-175mhz Datasheet PDF File

For 150-175mhz Found Datasheets File :: 266    Search Time::1.781ms    
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    RD07MVS1B11

Mitsubishi Electric Semiconductor
Part No. RD07MVS1B11
OCR Text ...3 a t ch junction temperature - 150 c tstg storage tempe rature - - 40 to +1 25 c rth j - c thermal resistance junction to case 2.5 c/w n...175mhz,idq=700ma,zg=50 ? load vswr=20:1(all phase) no destroy - load vswr tolerance v dd =9.2v,po= 7...
Description RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

File Size 415.52K  /  9 Page

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    D1027UK

TT electronics Semelab Limited
Semelab(Magnatec)
Seme LAB
Part No. D1027UK
OCR Text ...Idq = 2A Vds = 28V 16 dB 150 100 50 0 0 2 4 6 8 10 P in W Pout Drain Efficiency 150 100 50 0 0 2 4 6 8 10 P in W 2nd harmonic ...175MHz TEST FIXTURE T1,2,3 T4,5 T6 L1 L2 7cm Storm Products EXE18 19/30 S1TW coaxial cable on Sieme...
Description Gold Metallised Multi-Purpose Silicon DMOS RF FET(150W-28V-175MHz,Push-Pull)(镀金多用DMOS射频硅场效应150W-28V-175MHz,推挽)
METAL GATE RF SILICON FET

File Size 123.19K  /  6 Page

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    RD07MVS1B RD07MVS1B10

Mitsubishi Electric Semiconductor
Part No. RD07MVS1B RD07MVS1B10
OCR Text ...a tch junction temperature - 150 c tstg storage temperature - -40 to +125 c rth j-c thermal resistance junction to case 2.5 c...175mhz , v dd =7.2v pin=0.3w,idq=700ma 55 60 - % pout2 output power 7 8 - w d2 drain eff...
Description RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

File Size 205.51K  /  9 Page

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    RD07MVS1 RD07MVS111

Mitsubishi Electric Semiconductor
Part No. RD07MVS1 RD07MVS111
OCR Text ...3 a t ch junction temperature - 150 c tstg storage temperature - - 40 to +1 25 c rth j - c thermal resistance junction to case 2.5 c/w no...175mhz,idq=700ma,zg=50 ? load vswr=20:1(all phase) no destroy - load vswr tolerance v dd =9.2v,po=7w...
Description RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

File Size 422.30K  /  10 Page

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    RD07MVS2 RD07MVS211

Mitsubishi Electric Semiconductor
Part No. RD07MVS2 RD07MVS211
OCR Text ...3 a t ch junction temperature - 150 c tstg storage temperature - - 40 to +1 25 c rth j - c thermal resistance junction to case 2.5 c/w sc...175mhz,idq=700ma,zg=50 ? , load vswr=20:1(all phase) no destroy - load vswr tolerance v dd =9.2v,po=...
Description RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

File Size 443.38K  /  10 Page

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    VRF151G

Microsemi Corporation
Part No. VRF151G
OCR Text ...d VRF151G 170 36 40 500 -65 to 150 200 Unit V A V W C Static Electrical Characteristics Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) P...175MHz,- VDD = 50V, IDQ = 500mA, Pout = 300W f = 175MHz, VDD = 50V, IDQ = 500mA, Pout = 300W f = 175...
Description RF POWER VERTICAL MOSFET

File Size 105.57K  /  4 Page

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    DMD1006 DMD1006-A

Seme LAB
Part No. DMD1006 DMD1006-A
OCR Text ... f =175MHz 0 50 100 Pout W 150 Gain (dB) 200 150 Efficiency 200 Figure 1. Gain vs.Output Power Figure 2. Efficiency vs. Output Power -20 -30 -40 IMD dBc -50 -60 -70 -80 f1 = 175 MHz f2 = 175.1 MHz Vds = 28V I...
Description ROHS COMPLIANT METAL GATE RF SILICON FET

File Size 68.73K  /  5 Page

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    RA30H1317M111 RA30H1317M1-201

Mitsubishi Electric Semiconductor
Part No. RA30H1317M111 RA30H1317M1-201
OCR Text ...15 20 25 30 35 40 45 50 130 140 150 160 170 180 frequency f(mhz) o u t p u t p o w e r p o u t ( w ) i n p u t v s w r i n ( - ) 0 10 ...175mhz v dd =12.5v v gg =5v < silicon rf power module s > ra 30h1317m1 rohs compliance, 135 - 175 ...
Description RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO

File Size 227.79K  /  10 Page

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    MRF173CQ

M/A-COM Technology Solutions, Inc.
Part No. MRF173CQ
OCR Text ... * Guaranteed performance at 150 MHz, 28 V: Output power = 80 W Gain = 11 dB (13 dB typ.) Efficiency = 55% Min. (60% typ.) Low thermal re...175MHz, 28V M/A-COM Products Released - Rev. 07.07 2 ADVANCED: Data Sheets contain information...
Description The RF MOSFET Line 80W, 175MHz, 28V

File Size 221.10K  /  9 Page

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    D1002UK

SEME-LAB[Seme LAB]
Part No. D1002UK
OCR Text ... MHZ S MA R 50 !Freq MHz 50 100 150 200 250 300 350 400 450 500 550 600 S11 mag 0.76 0.79 0.84 0.87 0.90 0.92 0.94 0.96 0.97 0.98 0.98 0.98 ...175MHz TEST FIXTURE Substrate 1.6mm PTFE/glass, Er=2.5 All microstrip lines W=4.4mm T1 T2 T3 T4 10m...
Description Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应40W-28V-175MHz,单端))
METAL GATE RF SILICON FET

File Size 40.04K  /  4 Page

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For 150-175mhz Found Datasheets File :: 266    Search Time::1.781ms    
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