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Powerex, Inc. Powerex Power Semiconductors Mitsubishi Electric Corporation
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| Part No. |
FS50KMJ-3
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| OCR Text |
...Dimensions in mm
2.8 0.2
15 0.3
f 3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15
E
0.75 0.15
2.54 0.25
...25a, VGS = 10V ID = 25a, VGS = 4V ID = 25a, VGS = 10V ID = 25a, VDS = 10V VDS = 10V, VGS = 0V, f = 1... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 50 A, 150 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
47.31K /
4 Page |
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it Online |
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Renesas
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| Part No. |
2SK3151
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| OCR Text |
...50 0.95 100 Max -- -- 10 10 2.5 15 25 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns V V I F = 50A, VGS = 0 I F = 5...25a, VGS = 10VNote4 I D = 25a, VGS = 4V Note4 I D = 25a, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz ... |
| Description |
Transistors>Switching/MOSFETs
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| File Size |
82.25K /
13 Page |
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it Online |
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Niko
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| Part No. |
P0903BSG
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| OCR Text |
... VDS = 10V, VGS = 10V, ID = 25a 15 10 6 VDS = 15V, RL = 1 ID 50A, VGS = 10V, RGEN = 24 120 40 105 16 250 90 200 nS 1000 500 50 nC pF
Gate-Source Charge Gate-Drain Charge Rise Time2
2
Turn-On Delay Time
td(on) tr td(off) tf
Tur... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
384.08K /
5 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
MSAGZ52F120A
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| OCR Text |
...V CE = 25 V, f = 1 MHz
VGE = 15 V, V CE = 600 V, IC = 25 A, R G = 47 , L= 100 H note 2, 3
ns ns mJ ns ns mJ ns ns mJ ns ns mJ nC
VG...25a T J = 25 C T J = 100 C dIE/dt= 100 A/us, T J= 25C dIE/dt= 800 A/us, T J= 125C dIE/dt= 100 A/us, ... |
| Description |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
51.87K /
2 Page |
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it Online |
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Price and Availability
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