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  12a d Datasheet PDF File

For 12a d Found Datasheets File :: 5935    Search Time::2.172ms    
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    IXYS
Part No. IFRP460
OCR Text ...tj=25 0 c v gs = 10v i d = 12a figure 2. output characteristics at 125 o c figure 1. output characteristics at 25 o c figure 5. drain current vs. case temperature figure 6. admittance curves figure 3. r ds(on) normalized to value at i...
Description Power MOSFET

File Size 132.99K  /  4 Page

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    Nell Semiconductor Co., Ltd
Part No. 12PT06AI-S 12FT08G-S 12FT08G-T 12FT06F-S 12FT06F-T
OCR Text 12a symbol i t rms ( ) rms on state current full sine wave i tsm non repetitive surge peak on state current full cycle t initial = 25 c) (...d-pak) i = 2xl , t ns g gt r 100 1 2 3 to-220ab (lnsulated) (12ptxxf) (12ptxxg) (12ptxxa) (12ptxxai)...
Description Sensitive and Standard SCRs, 12a

File Size 1,112.57K  /  7 Page

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    12EWH06FN-M3 12EWH06FNTRL-M3 12EWH06FNTRR-M3 12EWH06FNTR-M3

Vishay Siliconix
Part No. 12EWH06FN-M3 12EWH06FNTRL-M3 12EWH06FNTRR-M3 12EWH06FNTR-M3
OCR Text ...0 0 0 1 0 0 1 10 20 30 40 50 60 12a, tj = 25c 12a, tj = 125c qrr ( nc ) di f /dt (a/s ) 0 0 0 1 0 0 1 0 50 100 150 200 250 300 350 12a,...d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm ...
Description Hyperfast Rectifier, 12 A FREd Pt?

File Size 152.24K  /  8 Page

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    FDD850N10L

Fairchild Semiconductor
Part No. Fdd850N10L
OCR Text ... resistance v gs = 10v, i d = 12a - 61 75 m v gs = 5v, i d = 12a - 64 96 m g fs forward transconductance v ds = 10v, i d = 15.7a -31-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 1100 1465 pf c...
Description N-Channel PowerTrench MOSFET 100 V, 15.7 A, 75 m Ohm

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    Fairchild Semiconductor, Corp.
Part No. SGF23N60UFdTU
OCR Text ...e : v ce(sat) = 2.1 v @ i c = 12a ? high input impedance ? co-pak, igbt with frd : t rr = 42ns (typ.) absolute maximum ratings t c...d maximum power dissipation @ t c = 25 c75 w maximum power dissipation @ t c = 100 c30 ...
Description 23 A, 600 V, N-CHANNEL IGBT TO-3PF, 3 PIN

File Size 635.01K  /  10 Page

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    Alpha
Part No. AOU454L
OCR Text ... =10v, v ds =5v v gs =10v, i d =12a reverse transfer capacitance i f =12a, di/dt=100a/ s v gs =0v, v ds =20v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions...
Description N-Channel Enhancement Mode Field Effect Transistor N沟道增强型场效应

File Size 65.40K  /  5 Page

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    MMQA5V6T3 MMQA20VT3 MMQA20VT3G MMQA6V2T1 MMQA6V2T1G MMQA6V2T3 MMQA6V8T1 MMQA6V8T3 MMQA15VT1 MMQA15VT3 MMQA18VT3 MMQA18VT

ONSEMI[ON Semiconductor]
Part No. MMQA5V6T3 MMQA20VT3 MMQA20VT3G MMQA6V2T1 MMQA6V2T1G MMQA6V2T3 MMQA6V8T1 MMQA6V8T3 MMQA15VT1 MMQA15VT3 MMQA18VT3 MMQA18VT1 MMQA27VT1 MMQA27VT3 MMQA MMQA12VT1 MMQA12VT1G MMQA12VT3 MMQA13VT1 MMQA20VT1 MMQA21VT1 MMQA21VT3 MMQA22VT1 MMQA22VT3 MMQA24VT1 MMQA24VT3 MMQA30VT1 MMQA30VT3 MMQA33VT1 MMQA33VT3 MMQA5V6T1 MMQA-d MMQA30V MMQA33V MMQA13V MMQA12V MMQA20V
OCR Text ...ing 5A6 5A6 6A2 6A2 6A2 6A8 6A8 12a 12a 12a 13A 15A 15A 18A 18A 20A 20A 20A 21A 21A 22A 22A 24A 24A 27A 27A 30A 30A 33A 33A Package SC-74 SC...d. Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case. FINI...
Description SC-74 Quad Monolithic Common Anode 资深大律 74四单片共阳极
SC-74 Quad Monolithic Common Anode 150 W, UNIdIRECTIONAL, 4 ELEMENT, SILICON, TVS dIOdE
CIR 60C 60#16 SKT RECP
SC-59 Quad Monolithic Common Anode

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    NTE2905

NTE Electronics
Part No. NTE2905
OCR Text ... = ? 10v), i d t c = +25 c ? 12a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t c = +100 c ? 7.5a . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description P?Ch, Enhancement Mode High Speed Switch

File Size 91.99K  /  3 Page

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    AP9563GH09 AP9563GJ09

Advanced Power Electronics Corp.
Part No. AP9563GH09 AP9563GJ09
OCR Text ...a - - 40 m ? v gs =-4.5v, i d =-12a - - 60 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-12a - 18 - s i dss drain-source leakage current v ds =-40v, v gs =0v - - -1 ua...
Description Lower Gate Charge, Simple drive Requirement, Fast Switching Characteristic

File Size 96.43K  /  4 Page

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