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Integrated Device Technology, Inc.
IDT
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| Part No. |
IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133BG IDT71V2548S133BQ IDT71V2548S133PFI IDT71V2548SA133BQ IDT71V2548S133BQI IDT71V2548SA133BQI IDT71V2546S133BQI IDT71V2548SA150PFI IDT71V2548SA150BQ IDT71V2548S150PF IDT71V2546SA IDT71V2546SA100BQI IDT71V2548SA100PFI IDT71V2546SA133BQ IDT71V2546SA133BQI IDT71V2548S150BG IDT71V2548S150BGI IDT71V2548S150PFI IDT71V2546S150PFI IDT71V2546S150BQ IDT71V2546S150BQI IDT71V2546SA100PFI IDT71V2546S100PFI8 IDT71V2546S100PF8 IDT71V2546SA150PF IDT71V2546SA150PFI
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| OCR Text |
... turnaround. features u u u u u 128k x 36, 256k x 18 memory configurations u u u u u supports high performance system speed - 150 mhz (3.8 n...byte write ( bw bw bw bw bw 1 - bw bw bw bw bw 4 ) control (may tie active) u u u u u three chip e... |
| Description |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100
25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
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| File Size |
1,009.24K /
28 Page |
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IDT
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Techn...
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| Part No. |
IDT71V3577S75PFG IDT71V3577SA80PFGI IDT71V3577SA85PFGI IDT71V3577SA75PFG IDT71V3577SA75PFGI IDT71V3577YS75PFGI IDT71V3577YSA80PFG IDT71V3577YSA75PFG IDT71V3577YSA75PFGI IDT71V3577YSA80PFGI IDT71V3579S75PFG IDT71V3579YS75PFGI IDT71V3579YSA80BQG IDT71V3579YSA80BQGI IDT71V3579YS80BQG IDT71V3579YS80BQGI IDT71V3579YS75BQGI IDT71V3579S85BQGI IDT71V3579S85BGG IDT71V3579SA75BGGI IDT71V3579SA75BQG IDT71V3579SA75BGG IDT71V3579SA75PFG IDT71V3579SA75PFGI IDT71V3577YSA75BQG IDT71V3579S75BQG IDT71V3577YS80BQG IDT71V3577YS80PFG IDT71V3577YS80BQGI IDT71V3577YS80PFGI IDT71V3577YS85BGG IDT71V3577YS85BGGI IDT71V3577YS85BQG IDT71V3577YS85BQGI IDT71V3577YS85PFG IDT71V3577YS85PFGI IDT71V3577S75BQ8
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| OCR Text |
128k x 36, 256k x 18 memory configurations u u u u u supports fast access times: commercial: C 7.5ns up to 117mhz clock frequency commercial...byte write enable ( bwe bwe bwe bwe bwe ), and byte writes ( bw bw bw bw bw x) u u u u u 3.3v core p... |
| Description |
3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3VI / O的流量，通过输出脉冲计数器，单周期取
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3V的I / O的流量，通过输出脉冲计数器，单周期取
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
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| File Size |
524.78K /
22 Page |
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Micron Technology, Inc.
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| Part No. |
MT55L256V18F1 MT55L256L18F1
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| OCR Text |
128k x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l256...byte write controls may be tied low single r/w# (read/write) control pin cke# pin to enable cloc... |
| Description |
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
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| File Size |
443.11K /
25 Page |
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Integrated Silicon Solution, Inc.
Integrated Silicon Solution...
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| Part No. |
IS61NVP6436A-200TQI IS61NVP12818A-250TQ IS61NVP12818A-200TQ IS61NVP6436A-250TQ IS61NVP6436A-250TQI
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| OCR Text |
...bits, 64k words by 36 bits, and 128k words by 18 bits, fabricated with issi 's advanced cmos technology. incorporating a 'no wait' state f...byte enables allow individual bytes to be written. a burst mode pin (mode) defines the order of the... |
| Description |
64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 18 ZBT SRAM, 3.1 ns, PQFP100
64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 18 ZBT SRAM, 2.6 ns, PQFP100
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| File Size |
130.92K /
21 Page |
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