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  120v 1.5a Datasheet PDF File

For 120v 1.5a Found Datasheets File :: 1300    Search Time::1.546ms    
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    2SA1075 2SA1076

Inchange Semiconductor Company Limited
Part No. 2SA1075 2SA1076
OCR Text ...; VCE=-10V VCB=-160V; IE=0 VCE=-120v; IB=0 VCB=-120v; IE=0 CONDITIONS 2SA1075 2SA1076 MIN -120 TYP. MAX UNIT V(BR)CEO C...1.8 -1.7 V V V V(BR)CBO Collector-base breakdown voltage V(BR)EBO VCEsat VBE Emitter-bas...
Description Silicon PNP Power Transistors

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    2SA1077

Inchange Semiconductor Company Limited
Part No. 2SA1077
OCR Text ... IB=-0.5A IC=-5A ; VCE=-5V VCB=-120v; IE=0 VCE=-120v; IB=0 VEB=-7V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-10V;f=10MHz IE=0 ; VCB=-10V;f=1MHz 60 40 30 60 300 MIN -120 -120 -7 -0.9 -1.25 TYP. 2SA1077 MAX UNIT V V V ...
Description Silicon PNP Power Transistors

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    2N4864

Inchange Semiconductor Company Limited
Part No. 2N4864
OCR Text ...lector current-IC=2A *High VCEO:120v (Min) APPLICATIONS *For use in general-purpose switching and linear amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTIO...
Description Silicon NPN Power Transistors

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    2SD1126

Inchange Semiconductor Company Limited
Part No. 2SD1126
OCR Text ...kdown voltage- : v (br)ceo = 120v(min) high dc current gain : h fe = 1000(min) @i c = 5a low saturation voltage applications ...1 collector-emitter saturation voltage i c = 5a; i b = 10ma b 1.5 v v ce( sat )-2 collector-...
Description isc Silicon NPN Darlington Power Transistor

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    2SK3922-01

Fuji Electric
Part No. 2SK3922-01
OCR Text ...rent i dss v ds =120v v gs =0v v ds =96v v gs =0v v gs =30v i d =33.5a v gs =10v i d =33.5a v ds =25v v cc =48v ...1 channel to ambient 0.463 87.0 52.0 c/w c/w c/w symbol v (br)dss v g...
Description N-CHANNEL SILICON POWER MOSFET

File Size 180.94K  /  4 Page

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    FZT1051A

Guangdong Kexin Industrial Co.,Ltd
Part No. FZT1051A
OCR Text ...EBO IE=100iA ICBO ICES IEBO VCB=120v VCE=120v VEB=4V 10 10 10 25 120 180 340 1100 1000 nA nA nA Collector-emitter saturation voltage * IC=0.2A, IB=10mA IC=1A, IB=10mA VCE(sat) IC=2A, IB=20mA IC=5A, IB=100mA VBE(sat) IC=5A, IB=10...
Description NPN Silicon Planar Medium Power High Gain Transistor

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    BDT61C BDT61B BDT61A

Inchange Semiconductor Company Limited
Part No. BDT61C BDT61B BDT61A
OCR Text ...n)- bdt61a; 100v(min)- bdt61b; 120v(min)- bdt61c complement to type bdt60/a/b/c applications designed for use in audio amplifier out...1 a collector power dissipation t a =25 2 p c collector power dissipation t c =25 50 w ...
Description isc Silicon NPN Darlington Power Transistors

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    SMA403201

Sanken electric
Part No. SMA403201
OCR Text ...nit conditions i cbo 10 av cb =120v i ebo 10 ma v eb =6v v ceo 100 v i c =25ma h fe 2000 6000 15000 v ce =4v, i c =1.5a v ce (sat) 1.1 1.5 v v be (sat) 1.7 2.0 v t on 0.5 sv cc 30v, t stg 2.2 si c =1.5a, t f 0.9 si b1 = C i b2 =3ma f t ...
Description NPN Darlington With built-in flywheel diode

File Size 33.32K  /  1 Page

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    FZT1053A

Guangdong Kexin Industrial Co.,Ltd
Part No. FZT1053A
OCR Text ...EBO IE=100iA ICBO ICES IEBO VCB=120v VCE=120v VEB=4V Testconditons Transistors Min 150 75 7.5 Typ 250 100 8.8 0.9 1.5 0.3 21 55 150 160 350 900 825 Max Unit V V V 10 10 10 30 75 200 210 440 1000 950 nA nA nA Collecto...
Description NPN Silicon Planar Medium Power High Gain Transistor

File Size 34.43K  /  2 Page

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    2SD864

Inchange Semiconductor Company Limited
Part No. 2SD864
OCR Text ...r Breakdown Voltage: V(BR)CEO = 120v(Min) *Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1.5a *Complement to Type 2SB765 APPLICATIONS *Medium speed and power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=2...
Description Silicon NPN Darlington Power Transistor

File Size 211.78K  /  2 Page

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