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  12.8a Datasheet PDF File

For 12.8a Found Datasheets File :: 12352    Search Time::0.938ms    
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    ST Microelectronics
Part No. STBW9NK90Z
OCR Text ...vs gate -source voltage figure 12. capacitance variations stb9nk90z - stf9nk90z - stp9nk90z - stw9nk90z 2 electrical characteristics 7/15 figure 13. normalized gate threshold voltage vs temperatute figure 14. normalized on resistanc...
Description N-CHANNEL MOSFET

File Size 419.97K  /  15 Page

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    IRF7389 IRF7389TR

IRF[International Rectifier]
Part No. IRF7389 IRF7389TR
OCR Text ...3.9 3.8 5.7 6.4 9.6 5.9 8.9 8.1 12 13 19 8.9 13 13 20 26 39 34 51 17 26 32 48 650 710 320 380 130 180 Units V V/C V S A nA Conditions...8A VGS = 4.5V, ID = 4.7A VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -3.6A VDS = VGS, I D = 250A VD...
Description Generation v technology
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 210.72K  /  10 Page

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    SPU02N60S508

Infineon Technologies AG
Part No. SPU02N60S508
OCR Text ... 100 120 c 160 t c 0 2 4 6 8 10 12 14 16 18 20 22 24 w 28 spu02n60s5 p tot 2 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0...
Description Cool MOS Power Transistor

File Size 713.68K  /  11 Page

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    SPB02N60S5 SPB02N60S507

Infineon Technologies AG
Part No. SPB02N60S5 SPB02N60S507
OCR Text ... 100 120 c 160 t c 0 2 4 6 8 10 12 14 16 18 20 22 24 w 28 spp02n60s5 p tot 2 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0...
Description Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology

File Size 340.10K  /  10 Page

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    SI4202DY

Vishay Siliconix
Part No. SI4202DY
OCR Text ...typ.) 30 0.014 at v gs = 10 v 12.1 5.4 nc 0.017 at v gs = 4.5 v 11 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 orderin...8a v ds =15v v ds =20v v ds =10v q g - total gate charge (nc) v gs - gate-to-source voltage (v) tr...
Description Dual N-Channel 30 V (D-S) MOSFET

File Size 317.17K  /  10 Page

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    SI4202DY-T1-GE3

Vishay Siliconix
Part No. SI4202DY-T1-GE3
OCR Text ...typ.) 30 0.014 at v gs = 10 v 12.1 5.4 nc 0.017 at v gs = 4.5 v 11 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 orderin...8a v ds =15v v ds =20v v ds =10v q g - total gate charge (nc) v gs - gate-to-source voltage (v) tr...
Description Dual N-Channel 30 V (D-S) MOSFET

File Size 252.01K  /  10 Page

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    M1.5KE8.2A M1.5KE82A M1.5KE250A M1.5KE24A M1.5KE200A M1.5KE22A M1.5KE20A M1.5KE220A M1.5KE51A M1.5KE56A M1.5KE150A M1.5K

Microsemi Corporation
MICROSEMI CORP-IRELAND
Part No. M1.5KE8.2A M1.5KE82A M1.5KE250A M1.5KE24A M1.5KE200A M1.5KE22A M1.5KE20A M1.5KE220A M1.5KE51A M1.5KE56A M1.5KE150A M1.5KE100A M1.5KE10A M1.5KE160A M1.5KE180A M1.5KE18A M1.5KE27A M1.5KE300A M1.5KE30A M1.5KE350A M1.5KE36A M1.5KE400A M1.5KE43A M1.5KE120A M1.5KE12A M1.5KE130A M1.5KE13A M1.5KE15A M1.5KE16A M1.5KE170A M1.5KE33A M1.5KE39A M1.5KE110A M1.5KE11A M1.5KE68A M1.5KE7.5A M1.5KE75A MXL1.5KE100AE3TR M1.5KE6.8A M1.5KE62A
OCR Text ...ction per iec61000 - 4 - 5 with 12 ohms source impedance: o class 1 : m1.5ke5.0a to m1.5ke110ca o class 2: m1.5ke5.0a to m1....8a m1.5ke7.5a 1n6267a 1n6268a 5.80 6.40 6.45 C 7.14 7.13 C 7.88 10 10 10.5...
Description Unidirectional and Bidirectional Transient Voltage Suppressor
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

File Size 346.07K  /  4 Page

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    ELM13404CA-S

ELM Technology Corporation
Part No. ELM13404CA-S
OCR Text ...1.80 nc gate-drain charge qgd 3.12 nc turn - on delay time td(on) vgs=10v, vds=15v rl=2.7, rgen=3 4.6 6.5 ns turn - on rise time tr 3.8 5.7...8a single pulse d=ton /t t j ,pk =t a +p dm .z ? ja .r ? ja r ? ja =90c/w ton t p d in descending or...
Description Single N-channel MOSFET

File Size 314.08K  /  4 Page

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    Fairchild Semiconductor, Corp.
Part No. FJAF6812TU
OCR Text ... 6 v i c collector current (dc) 12 a i cp * collector current (pulse) 24 a p c collector dissipation 60 w t j junction temperature 150 c t ...8a 10 5 40 8 v ce (sat) collector-emitter saturation voltage i c =8a, i b =2a 3 v v be (sat) base-em...
Description NPN Triple Diffused Planar Silicon Transistor; Package: TO-247/TO-3P/TO-3PF; No of Pins: 3; Container: Rail 12 A, 750 V, NPN, Si, POWER TRANSISTOR

File Size 107.45K  /  6 Page

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    Mitsubishi Electric Corporation
Part No. FS16UMA-5A
OCR Text ...a 10.5max. 4.5 1.3 3.6 3.2 16 12.5min. 3.8max. 1.0 0.8 2.54 2.54 4.5max. 0.5 2.6 7.0 ??? ? gate ? drain ? source ? drain ? ?? ? ? ...8a, v gs = 10v i d = 8a, v gs = 10v i d = 8a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd...
Description Power MOSFETs: FS Series, Medium Voltage, 250V

File Size 61.68K  /  4 Page

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