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  10v ms Datasheet PDF File

For 10v ms Found Datasheets File :: 14775    Search Time::2.547ms    
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    NXP Semiconductors N.V.
Part No. PSMN016-100YS PSMN016-100YS11
OCR Text ... drain current t mb =25c; v gs =10v; see figure 1 --51a p tot total power dissipation t mb =25c; see figure 2 --117w t j junction tempera...ms 10 ms 1 ms 100 s t p = 10 s psmn016-100ys all information provided in this document is subje...
Description N-channel 100 V 16.3 m standard level MOSFET in LFPAK
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK

File Size 296.01K  /  15 Page

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    FQT4N20L FQT4N20LTF

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. FQT4N20L FQT4N20LTF
OCR Text ...istance 6 VGS = 5 V VGS = 10v IDR , Reverse Drain Current [A] 10 0 4 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Tes...ms 10 ms 100 ms 0.8 0.6 0.4 0.2 10 -1 10 0 10 1 10 2 0.0 25 ...
Description 200V N-Channel Logic Level QFET
200V LOGIC N-Channel MOSFET 0.85 A, 200 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 626.17K  /  8 Page

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    Analog Power
Part No. AM7510C
OCR Text ...2 @ v gs = 5.5v 275 @ v gs = -10v r ds(on) (m) 62 @ v gs = 10v product summary parameter drain-source voltage gate-source voltage absol...ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0 20 40 60 80 100 120 140 160 0.0...
Description MOSFET

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    FP10R12KE3

Eupec GmbH
Part No. FP10R12KE3
OCR Text ...mWs mWs - diF/dt = VGE = -10v, Tvj = 25C, VR = VGE = -10v, Tvj = 125C, VR = IF=INenn, - diF/dt = VGE = -10v, Tvj = 25C, VR = VGE = -10v, Tvj = 125C, VR = IF=INenn, - diF/dt = VGE = -10v, Tvj = 25C, VR = VGE = -10v, Tvj = 125C, VR = ...
Description IGBT Modules

File Size 250.94K  /  12 Page

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    BSP76

Infineon Technologies AG
Part No. BSP76
OCR Text ...ous input current2) -0.2V VIN 10v VIN < -0.2V or VIN > 10v Operating temperature Storage temperature Power dissipation 5) TC = 85 C Unclam...ms, RI = 2 W, RL = 9 W, VA = 13.5 V Electrostatic discharge voltage2) (Human Body Model) VESD accord...
Description Smart Low Side Switches - 42V, 200mΩ 1,4A SOT 223
Smart Lowside Power Switch

File Size 272.23K  /  10 Page

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    32N50Q

IXYS Corporation
Part No. 32N50Q
OCR Text ...t 25OC 80 70 60 TJ = 25OC VGS=10v 9V 8V 7V 6V 6V 40 ID - Amperes 50 40 30 20 10 0 ID - Amperes 30 5V 20 10 4V 5V 0 4 8 12 16 20 0 0 4 8 12 16 20 VDS - Volts VDS - Volt...
Description Search To IXFR32N50Q

File Size 119.61K  /  4 Page

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    INFINEON
Part No. 03N60S5
OCR Text ... IGSS VGS=20V, VDS=0V VGS=10v, ID=2A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Rev. 2.1 Page 2 2004-03-30 ...ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 20 40 60 80 100 120 C 160 10 ...
Description Search --To SPP03N60S5 / SPN03N60S5 / SPU03N60S5

File Size 342.43K  /  10 Page

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    BFN26 BFN24

Infineon Technologies AG
Part No. BFN26 BFN24
OCR Text ...ion frequency fT = f (IC) VCE = 10v 400 10 3 MHz fT BFN 24/26 EHP00622 mW 300 P tot 250 200 10 2 150 5 ...ms 100 ms 5 10 1 5 10 1 5 500 ms DC 10 0 5 10 0 10 -6 10 -5 10 -4 10 ...
Description NPN Silicon High Voltage Transistor f...
NPN Silicon High-Voltage Transistors

File Size 47.19K  /  5 Page

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For 10v ms Found Datasheets File :: 14775    Search Time::2.547ms    
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