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NXP Semiconductors N.V.
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| Part No. |
PSMN016-100YS PSMN016-100YS11
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| OCR Text |
... drain current t mb =25c; v gs =10v; see figure 1 --51a p tot total power dissipation t mb =25c; see figure 2 --117w t j junction tempera...ms 10 ms 1 ms 100 s t p = 10 s
psmn016-100ys all information provided in this document is subje... |
| Description |
N-channel 100 V 16.3 m standard level MOSFET in LFPAK N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
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| File Size |
296.01K /
15 Page |
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Analog Power
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| Part No. |
AM7510C
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| OCR Text |
...2 @ v gs = 5.5v 275 @ v gs = -10v r ds(on) (m) 62 @ v gs = 10v product summary parameter drain-source voltage gate-source voltage absol...ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0 20 40 60 80 100 120 140 160 0.0... |
| Description |
MOSFET
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| File Size |
416.22K /
7 Page |
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Eupec GmbH
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| Part No. |
FP10R12KE3
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| OCR Text |
...mWs mWs
- diF/dt =
VGE = -10v, Tvj = 25C, VR = VGE = -10v, Tvj = 125C, VR = IF=INenn, - diF/dt = VGE = -10v, Tvj = 25C, VR = VGE = -10v, Tvj = 125C, VR = IF=INenn, - diF/dt = VGE = -10v, Tvj = 25C, VR = VGE = -10v, Tvj = 125C, VR =
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| Description |
IGBT Modules
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| File Size |
250.94K /
12 Page |
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INFINEON
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| Part No. |
03N60S5
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| OCR Text |
...
IGSS
VGS=20V, VDS=0V VGS=10v, ID=2A, Tj=25C Tj=150C
Drain-source on-state resistance RDS(on)
Rev. 2.1
Page 2
2004-03-30
...ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
20
40
60
80
100
120
C
160
10
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| Description |
Search --To SPP03N60S5 / SPN03N60S5 / SPU03N60S5
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| File Size |
342.43K /
10 Page |
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it Online |
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