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For 100us Found Datasheets File :: 4521 Search Time::1.703ms
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				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BYW29EB BYW29EB-150 BYW29EB-200 BYW29ED BYW29ED-150 BYW29ED-200 BYW29EB-100 BYW29ED-100
OCR Text	...00 0.001 1us T 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYL1025 Fig.8. Maximum Irrm at Tj = 25 C. Fig.11. Transient thermal impedance; Zth j-mb = f(tp). 30 IF / A Tj=150 C Tj=25 C BYW29 20 typ 1...
Description	Rectifier diodes ultrafast/ rugged Rectifier diodes ultrafast, rugged
File Size	58.79K / 8 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	BYW29EX BYW29EX-150 BYW29EX-200 BYW29EX-100
OCR Text	...00 0.001 1us T 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) BYW29F/EX Fig.8. Maximum Irrm at Tj = 25 C. Fig.11. Transient thermal impedance; Zth j-hs = f(tp). 30 IF / A Tj=150 C Tj=25 C BYW29 20 typ ...
Description	Rectifier diodes ultrafast, rugged(超快速、强化的整流器二极管) Rectifier diodes ultrafast/ rugged
File Size	47.05K / 6 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BYW29E BYW29E-150 BYW29E-200
OCR Text	...00 0.001 1us T 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYL1025 Fig.8. Maximum Irrm at Tj = 25 C. Fig.11. Transient thermal impedance; Zth j-mb = f(tp). 30 IF / A Tj=150 C Tj=25 C BYW29 20 typ 1...
Description	Rectifier diodes ultrafast/ rugged Rectifier diodes ultrafast, rugged
File Size	43.83K / 6 Page	View it Online	Download Datasheet

				Zetex Semiconductor PLC Zetex Semiconductors
Part No.	FCX688B FCX688BTA
OCR Text	...E=2V 1 DC 1s 100ms 10ms 1ms 100us 0.1 0.01 0.1 1 10 0.01 100m 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC IC Safe Operating Area
Description	TRANSISTOR NPN 12V 3000MA SOT-89 3000 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR NPN SILICON POWER (SWITCHING) TRANSISTOR
File Size	79.15K / 3 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDW2507NZ FDW2507NZNL FDW2507NZQ
OCR Text	...0 VDS, DRAIN-SOURCE VOLTAGE (V) 100us P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. 40 SINGLE PULSE RJA = 114C/W TA = 25C 30 1 20 0.1 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 1...
Description	Common Drain N-Channel 2.5V specified PowerTrench MOSFET
File Size	127.22K / 5 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDW2507N
OCR Text	...0 VDS, DRAIN-SOURCE VOLTAGE (V) 100us P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. 40 SINGLE PULSE RJA = 114C/W TA = 25C 30 1 20 0.1 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 1...
Description	Common Drain N-Channel 2.5V specified PowerTrench MOSFET
File Size	126.67K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDW2509 FDW2509NZ
OCR Text	...ANSIENT POWER (W) RDS(ON) LIMIT 100us ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s 10s DC VGS = 4.5V SINGLE PULSE RJA = 114oC/W TA = 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 50 SINGLE PUL...
Description	Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
File Size	120.10K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDW9926NZ
OCR Text	...S, DRAIN-SOURCE VOLTAGE (V) 10s 100us 50 Figure 8. Capacitance Characteristics. 40 SINGLE PULSE RJA = 208C/W TA = 25C 30 20 0.1 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum ...
Description	Common Drain N-Channel 2.5V specified PowerTrench MOSFET
File Size	129.78K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp.
Part No.	FDW9926 FDW9926A
OCR Text	... RJA = 208oC/W TA = 25oC 10s 100us 40 SINGLE PULSE RJA = 208C/W TA = 25C 30 20 0.1 10 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Ma...
Description	Dual N-Channel 2.5V Specified PowerTrench MOSFET 双N沟道MOSFET的为2.5V指定的PowerTrench
File Size	110.31K / 5 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFP250N IRFP250
OCR Text	...rain Current (A) 100 10us 100us 10 1ms TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 1 TC = 25 C TJ = 175 C Single Pulse 10 100 10ms 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Sourc...
Description	Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) N-Channel(Hexfet Transistors) Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A) Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET（减振钢板基本\u003d 200第五的Rdson）\u003d 0.075ohm，身份证\u003d 30A条）
File Size	120.07K / 8 Page	View it Online	Download Datasheet

For 100us Found Datasheets File :: 4521 Search Time::1.703ms
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