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Analog Devices, Inc.
AD[Analog Devices]
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| Part No. |
ADL5322ACPZ-WP ADL5322-EVAL ADL5322ACPZ-R7 ADL5322
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| OCR Text |
...UT MATCH
4 RFOUT 3 GND 2 VCC 1 VCC
INPUT MATCH
ADL5322
APPLICATIONS
CDMA2000, WCDMA, and GSM base station transceivers and high...931/177.282 10.856/169.006 10.781/160.613 10.698/152.065 10.605/143.342 10.493/134.489 10.361/125.43... |
| Description |
700 MHz to 1000 MHz GaAs Matched RF PA Predriver 700 MHz - 1000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
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| File Size |
156.46K /
12 Page |
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IXYS Corporation
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| Part No. |
IXGP7N60B IXGA7N60B
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| OCR Text |
...to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 Clamped inductive...931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
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| Description |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
HiPerFAST IGBT
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| File Size |
68.86K /
2 Page |
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it Online |
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Ericsson Microelectronics
ERICSSON[Ericsson]
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| Part No. |
PTF10045
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| OCR Text |
1.60-1.65 GHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10045 is a common source N-channel enhancement-mode lateral MOSFET int...931 0.949 0.958 0.931 0.970 0.956 0.965 0.961 0.967 0.977 0.952 0.985 0.962 0.998 0.950 0.955 0.950 ... |
| Description |
30 Watts, 1.60.65 GHz GOLDMOS Field Effect Transistor
30 Watts 1.60-1.65 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor
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| File Size |
206.38K /
6 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXFX180N10 IXFK180N10
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| OCR Text |
.../dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25C to 150...931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXFK 180N10 IXFX 180N10
Figure 1. Output ... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
100V HiperFET Power MOSFET
Single MOSFET Die
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| File Size |
108.94K /
4 Page |
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it Online |
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IXYS Corporation
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| Part No. |
IXGA16N60C2 IXGA16N60C2D1 IXGP16N60C2 IXGP16N60C2D1
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| OCR Text |
...to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 110C TC = 110C (IXG_16N60C2D1 diode) TC = 25C, 1 ms VGE = 15 V, TJ = ...931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
=
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| Description |
HiPerFASTTM IGBT C2-Class High Speed IGBT
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| File Size |
523.80K /
2 Page |
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IXYS Corporation
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| Part No. |
IXGA4N100 IXGP4N100
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| OCR Text |
...to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 120 W Clamped induct...931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
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| Description |
1000V IGBT
ADVANCED TECHNICAL INFORMATION
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| File Size |
104.32K /
2 Page |
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IXYS Corporation
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| Part No. |
IXGH12N90C
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| OCR Text |
...o 150C T J = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 33 W Clamped inducti...931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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| Description |
Lightspeed Series HiPerFAST IGBT(VCES00V，VCE(sat).0VB>HiPerFAST绝缘栅双极晶体管)
HiPerFAST IGBT Lightspeed Series
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| File Size |
33.36K /
2 Page |
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IXYS[IXYS Corporation]
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| Part No. |
IXTA75N10P IXTP75N10P IXTQ75N10P
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| OCR Text |
...to 175C TJ = 25C to 175C; RGS = 1 M
Maximum Ratings 100 100 20 V V V A A A mJ J V/ns W C C C C C
G = Gate S = Source G S (TAB) D = Drain...931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,... |
| Description |
Discrete MOSFETs: Standard N-channel Types
N-Channel Enhancement Mode
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| File Size |
577.50K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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