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  1-output 1000 w ac-dc reg pwr Datasheet PDF File

For 1-output 1000 w ac-dc reg pwr Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    Micropac Industries, Inc.
MICROPAC[Micropac Industries]
Part No. 53246
Description RADIATION TOLERANT 40VDC - 2A SOLID STATE RELAY TRANSISTOR OUTPUT SOLID STATE RELAY, 1000 V ISOLATION-MAX

File Size 151.37K  /  7 Page

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    Micropac Industries, Inc.
MICROPAC[Micropac Industries]
Part No. 53258
Description RADIATION TOLERANT 120VDC - 5A SOLID STATE RELAY TRANSISTOR OUTPUT SOLID STATE RELAY, 1000 V ISOLATION-MAX

File Size 116.61K  /  4 Page

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Part No. SK012D S8025L SK055N
Description 12 A, 1000 V, SCR, TO-252
25 A, 800 V, SCR, TO-220AB
55 A, 1000 V, SCR, TO-263AB

File Size 143.57K  /  12 Page

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    Micro Commercial Components, Corp.
Part No. HER208G-AP HER205G HER203G-BP
Description 2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15 ROHS COMPLIANT, PLASTIC PACKAGE-2
2.0 Amp Glass Passivated High Efficient Rectifiers 50 to 1000 Volts
2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15

File Size 233.34K  /  3 Page

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    SLDB101S10 SLDB107S

Rectron Semiconductor
RECTRON LTD
Part No. SLDB101S10 SLDB107S
Description SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

File Size 201.06K  /  5 Page

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    DB207S DB206S DB205S DB201S DB202S DB203S DB204S DB207S-T

RECTRON LTD
Rectron Semiconductor
Part No. DB207S DB206S DB205S DB201S DB202S DB203S DB204S DB207S-T
Description 2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes

File Size 343.63K  /  6 Page

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    DS1004Z-3T LFSCM3GA15EP1-7F256C LFSCM3GA15EP1-7F900C LFSCM3GA25EP1-7F900C LFSCM3GA15EP1-7FN256C LFSCM3GA15EP1-7FN900C LF

Maxim Integrated Products
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
Part No. DS1004Z-3T LFSCM3GA15EP1-7F256C LFSCM3GA15EP1-7F900C LFSCM3GA25EP1-7F900C LFSCM3GA15EP1-7FN256C LFSCM3GA15EP1-7FN900C LFSCM3GA15EP1-7F256CES LFSCM3GA15EP1-7F900CES LFSCM3GA25EP1-7F900CES LFSCM3GA25EP1-7FF1020C LFSCM3GA40EP1-7FC1152C LFSCM3GA40EP1-7FF1020C LFSCM3GA40EP1-7FF1152C LFSCM3GA80EP1-7FC1152C LFSCM3GA80EP1-7FC1704C LFSCM3GA80EP1-7FF1152C LFSC3GA40E-6FFAN1020C LFSCM3GA80EP1-6FC1704I LFSCM3GA80EP1-5FC1152C LFSCM3GA40EP1-6FF1152C LFSCM3GA40EP1-5FFN1020C LFSCM3GA40EP1-5FFN1152I LFSC3GA25E-5FF1020C LFSC3GA25E-5FFN1020C LFSC3GA25E-5FFA1020C LFSC3GA25E-5FN900C LFSC3GA25E-5FFAN1020C
Description FPGA, 56 CLBS, 15000 GATES, 1000 MHz, PBGA256 17 X 17 MM, LEAD FREE, FPBGA-256
FPGA, 56 CLBS, 15000 GATES, 1000 MHz, PBGA900 31 X 31 MM, LEAD FREE, FPBGA-900
FPGA, 104 CLBS, 25000 GATES, 1000 MHz, PBGA900 31 X 31 MM, FPBGA-900
FPGA, 56 CLBS, 15000 GATES, 1000 MHz, PBGA256 17 X 17 MM, FPBGA-256
FPGA, 216 CLBS, 40000 GATES, 1000 MHz, PBGA1020 33 X 33 MM, LEAD FREE, FCBGA-1020
FPGA, 308 CLBS, 80000 GATES, 1000 MHz, CBGA1704 42.5 X 42.5 MM, CERAMIC, FCBGA-1704
FPGA, 308 CLBS, 80000 GATES, 1000 MHz, PBGA1152 35 X 35 MM, FCBGA-1152
FPGA, 216 CLBS, 40000 GATES, 1000 MHz, PBGA1152 35 X 35 MM, FCBGA-1152
FPGA, 216 CLBS, 40000 GATES, 1000 MHz, PBGA1152 35 X 35 MM, LEAD FREE, FCBGA-1152
FPGA, 104 CLBS, 25000 GATES, 1000 MHz, PBGA1020

File Size 2,074.79K  /  243 Page

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    Micropac Industries, Inc.
MICROPAC[Micropac Industries]
Part No. 53254
Description 40VDC - 10A SOLID STATE RELAY TRANSISTOR OUTPUT SOLID STATE RELAY, 1000 V ISOLATION-MAX

File Size 112.97K  /  4 Page

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    1014-12

GHz Technology
List of Unclassifed Manufacturers
ETC[ETC]
Part No. 1014-12
Description 12 w, 28 V, 1000-1400 MHz common base transistor
12 watt - 28 Volts, Class C Microwave 1000 - 1400 MHz
L BAND, Si, NPN, RF POwER TRANSISTOR

File Size 95.23K  /  2 Page

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    MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D
Description TMOS POwER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆
TMOS POwER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POwER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate

File Size 232.49K  /  8 Page

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For 1-output 1000 w ac-dc reg pwr Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

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