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Matsshita / Panasonic
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| Part No. |
2SC5363TENTATIVE
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| OCR Text |
...1.60.15
s Features
q q q
0.4
0.80.1
0.4
0.2-0.05 0.15-0.05
+0.1
High transition frequency fT. Small collector output capac...9 6 2 30 125 125 -55 ~ +125 Unit V V V mA mW C C
1:Base 2:Emitter 3:Collector
EIAJ:SC-75 SS-Mi... |
| Description |
2SC5363(Tentative) - NPN Transistor
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| File Size |
45.64K /
3 Page |
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it Online |
Download Datasheet
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panasonic
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| Part No. |
2SC5363
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| OCR Text |
0.2+0.1 -0.05 0.15+0.1 -0.05
q
1 (0.5) (0.5) 1.00.1 1.60.1 5
2
(0.4)
(0.3)
s Absolute Maximum Ratings
Parameter Collector...9 6 2 30 125 125 -55 ~ +125
Unit V V V mA mW C C
1:Base 2:Emitter 3:Collector
EIAJ:SC-75 SSMi... |
| Description |
SSMini3-G1
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| File Size |
42.78K /
3 Page |
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it Online |
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njr
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| Part No. |
NJM12903 NJG1101F
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| OCR Text |
...0mA typ. 18dB typ. @f=1.5GHz (f=0.85~2.5GHz @3dB down) 40dB typ. @VCONT=+0.1~+2.0V +1.5dBm typ. @f=1.5GHz MTP6 (Mount Size: 2.8 x 2.9 x 1.2mm)
F TYPE (Top View)
1
6
2
5
Pin connection 1.RFin 2.GND 3.VCONT 4.RFout & VDD 5.G... |
| Description |
SINGLE SUPPLY DUAL COMPARATOR
WIDE BAND AGC AMPLIFIER GaAs MMIC
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| File Size |
542.24K /
15 Page |
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it Online |
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Sanyo
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| Part No. |
2SC4401
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| OCR Text |
...ions
unit:mm 2059B
[2SC4401]
0.425
0.3 3 0~0.1
0.425
* Low-voltage operation : fT=3.0GHz typ (VCE=3V) : MAG=11dB typ (VCE=3V, IC=3...9
0.6
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltag... |
| Description |
NPN Epitaxial Planar Silicon Transistor VHF/UHF Mixer, Local Oscillator, Low-Voltage Amplifier Applications
NPN Epitaxial Planar Silicon Transistors
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| File Size |
117.92K /
5 Page |
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it Online |
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Sanyo
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| Part No. |
2SC4402
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| OCR Text |
...ions
unit:mm 2059B
[2SC4402]
0.425
0.3 3 0~0.1 0.15
0.425
* Low-voltage operation : fT=3.0GHz typ (VCE=3V) : MAG=12dB typ (VCE=3V,...9
0.6
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltag... |
| Description |
NPN Epitaxial Planar Silicon Transistors
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| File Size |
119.03K /
5 Page |
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it Online |
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Sanyo
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| Part No. |
2SC4403
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| OCR Text |
...ions
unit:mm 2059B
[2SC4403]
0.425
0.3 3 0~0.1
Features
* High cutoff frequency : fT=3.0GHz typ * High power gain : MAG=12dB typ (f=...9
0.6
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltag... |
| Description |
NPN Epitaxial Planar Silicon Transistor VHF/UHF Local Oscillator Applications
NPN Epitaxial Planar Silicon Transistors
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| File Size |
111.70K /
5 Page |
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it Online |
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Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
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| Part No. |
CGY121A Q-62702-G66 CGY121
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| OCR Text |
...mbol Ig Ic Id
min -
typ 1.0 0.5 45
max -
Unit mA mA mA
3
Semiconductor Group
3
23.06.98 HL HF PE GaAs1 1998-11-01
CGY 121 A
Application Circuit f = 900 MHz
Vd C3 R2 R3
C4
L1
3
L2
Output
1
Inpu... |
| Description |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB)
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| File Size |
92.24K /
8 Page |
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it Online |
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MAXIM - Dallas Semiconductor
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| Part No. |
MAX3970
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| OCR Text |
...FILTER 200pF IN OUT+ OUT1.0V RF 0.01F
3.3V
LIMITING AMPLIFIER 0.01F
RSSI
_______________________________________________________...9 70 8 16 0.9 1200 1800 70 410 470 500 700 22 0.96 1500 3000 58 875 13.2 150 1.45 1.45 CONDITIONS MI... |
| Description |
"10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI"
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| File Size |
482.70K /
10 Page |
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it Online |
Download Datasheet |
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Price and Availability
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