0.45-6ghz pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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0.45-6ghz Datasheet PDF File

For 0.45-6ghz Found Datasheets File :: 610 Search Time::2.703ms
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				Infineon Technologies AG
Part No.	BFP182
OCR Text	...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...45 dB GHz pF typ. 8 0.27 0.27 0.6 fT Ccb Cce Ceb F 6 - Gms - 1.2 1.9 21.5 - Gma...
Description	RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA NPN Silicon RF Transistor
File Size	77.60K / 7 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	S1T8536X01-T0R0 S1T8536
OCR Text	...bricated using Samsung's ASP5HB 0.5um advanced BiCMOS process. The S1T8536 contains receiver, transmitter, frequency doubler, voltage contro...45 FD TX OUT 46 GND 47 VCO VCC VCO 48 Regulator (2.85V) 1 2 Regulator (2.85V) A 24 GND BB...
Description	2.4GHZ-2.5GHZ SINGLE-CHIP RF TRANSCEIVER Data Sheet
File Size	312.82K / 24 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLL410IK-3C
OCR Text	...5.0dBm Channel to Case Min. -0.1 -5.0 45.0 12.0 - Limit Typ. 4.0 -0.3 46.0 13.0 5.9 52 1.3 Max. -0.5 7.6 1.5 Unit A V V dBm dB A % o Output Power Linear Gain*1 Drain Current Power-added Efficiency Thermal Resistance C/W ...
Description	L-Band High Power GaAs FET
File Size	242.33K / 6 Page	View it Online	Download Datasheet

				Fujitsu Microelectronics Eudyna Devices Inc Fujitsu Media Devices Limited Fujitsu Component Limited.
Part No.	FLL410IK-4C
OCR Text	...GS PT Tstg Tch Rating 15 -5 107.0 -65 to +175 175 o Unit V V W C C o RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC) ...45.0 10.5 - Limit Typ. 4.0 -0.3 46.0 11.5 6.7 44 1.0 Max. -0.5 8.7 1.4 Unit A V V dBm dB A ...
Description	L-Band High Power GaAs FET
File Size	244.15K / 6 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BFP650E6327 BFP650
OCR Text	... dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability 70 GHz fT - Silicon Germanium technology 3 4 ...45 1.1 - GHz pF Collector-base capacitance VCB = 3 V, f = 1 MHz Ccb Cce Ceb F Collec...
Description	NPN Silicon Germanium RF Transistor
File Size	179.20K / 6 Page	View it Online	Download Datasheet

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