|
|
|
Micron Technology, Inc.
|
Part No. |
MT58L64L18F MT58L32L32F MT58L32L36F
|
OCR Text |
...E# access times * Single +3.3V +0.3V/-0.165V power supply (VDD) * Separate +3.3V +0.3V/-0.165V isolated output buffer supply (VDDQ) * SNOOZE...18 32K x 32 32K x 36 * Package 100-pin TQFP * Operating Temperature Range Commercial (0C to +70C) In... |
Description |
32K x 323.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 32K x 363.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K的18.3V的I / O的流量通过SyncBurst的SRAM兆,3.3V的输输出,流通式同步脉冲静态内存)
|
File Size |
323.17K /
17 Page |
View
it Online |
Download Datasheet |
|
|
|
MICRON[Micron Technology]
|
Part No. |
MT28F321P20 MT28F321P18
|
OCR Text |
0.18m Process Technology
FEATURES
* Flexible dual-bank architecture Support for true concurrent operation with zero latency Read bank a ...18 = 1.70V-1.90V 20 = 1.80V-2.20V
Table 2 Valid Part Number Combinations
ACCESS TIME (ns) 70 70 ... |
Description |
FLASH MEMORY
|
File Size |
365.32K /
35 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|