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hitachi
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Part No. |
2SD2295
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OCR Text |
... -- -- -- Max -- 500 20 5 1.5 3.0 1.0 V V V s Unit V A Test conditions I E = 350 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A I C = 4.5 A, IB = 1.2 A I C = 4.5 A, IB = 1.2 A IF = 6 A I CP = 4 A, IB1 = 0.8 A, f H = 15.75 kHz
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Description |
Silicon NPN Triple Diffused From old datasheet system
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File Size |
31.08K /
5 Page |
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it Online |
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hitachi
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Part No. |
2SD2297
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OCR Text |
...- -- -- Max -- 500 25 5 1.5 3.5 0.8 V V V s Unit V A Test conditions I E = 400 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A I C = 5 A, IB = 1 A I C = 5 A, IB = 1 A IF = 6 A I CP = 5 A, IB1 = 1 A, f H = 15.75 kHz
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2SD2297
3... |
Description |
Silicon NPN Triple Diffused From old datasheet system
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File Size |
31.30K /
5 Page |
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it Online |
Download Datasheet |
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hitachi
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Part No. |
2SD2423
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OCR Text |
...1. When using the ceramic board 0.7 mm thick (12.5 mm x 20 mm).
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 50 50 50 7 -- 2000 -- -- -- -- -- Typ -- -- -- -- -- -- -- -- -- -- -- Ma... |
Description |
Silicon NPN Triple Diffused From old datasheet system
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File Size |
38.40K /
5 Page |
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it Online |
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Matsshita / Panasonic
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Part No. |
2SD601A 0357
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OCR Text |
...ary to 2SB0709A (2SB709A)
2.8 -0.3
+0.2
Unit: mm
I Features
G G G
0.650.15
+0.25 1.5 -0.05
0.650.15
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package, allowi... |
Description |
Transistor From old datasheet system
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File Size |
61.90K /
3 Page |
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it Online |
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Matsshita / Panasonic
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Part No. |
2SD966 0345
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OCR Text |
...55 ~ +150 Unit V V V A A W C C
0.45-0.1 1.27 1.27
+0.2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature S... |
Description |
Transistor From old datasheet system
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File Size |
58.47K /
3 Page |
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it Online |
Download Datasheet |
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Sanyo
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Part No. |
2SJ277
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OCR Text |
...sions
unit:mm 2093A
[2SJ277]
0.9 10.2 4.5 1.3
11.5
1.6
20.9
1.2 11.0
9.4
0.8
8.8
0.4 1 2 3 2.7
2.55
2.55
1 : Gate 2 : Drain 3 : Source SANYO : SMP
unit:mm 2090A
0.8 10.2
[2SJ277]
4.5
1.3
1... |
Description |
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
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File Size |
95.97K /
4 Page |
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it Online |
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hitachi
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Part No. |
2SJ530L2SJ530S 2SJ530
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OCR Text |
...
* Low on-resistance R DS(on) = 0.08 typ. * 4V gate drive devices. * High speed switching.
Outline
2SJ530(L),2SJ530(S)
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak ... |
Description |
Silicon P Channel MOS FET
High Speed Power Switching From old datasheet system
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File Size |
82.40K /
9 Page |
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it Online |
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Matsshita / Panasonic
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Part No. |
2SK0614 0885
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OCR Text |
...D IDP PD Tch Tstg Ratings 80 20 0.5 1 750 150 -55 to +150 Unit V V A A mW C C
2.540.15 1.27 1.27 0.45 -0.1
+0.2
13.50.5
G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL
0.45 -0.1... |
Description |
Silicon MOS FETs (Small Signal) From old datasheet system
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File Size |
72.84K /
3 Page |
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it Online |
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panasonic
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Part No. |
2SK0614 2SK614
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OCR Text |
...Features
5.00.2
4.00.2
0.70.1
0.70.2 12.90.5
G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL
I Absolute Maximum Ratings (Ta = 25C)
Parameter Drain to Source voltage Gate... |
Description |
Small-signal device - Small-signal FETs - MOS FETs From old datasheet system TO-92-A1
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File Size |
73.34K /
3 Page |
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it Online |
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Matsshita / Panasonic
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Part No. |
2SK1374 0896
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OCR Text |
...on-diode q Allowing 2.5V drive
0.65
0.425
1.250.1
0.425
1
2.00.2
1.30.1
0.65
3
2
s Absolute Maximum Ratings (Ta = 25C)
0.90.1
Drain to Source voltage Gate to Source voltage Drain current Max drain current ... |
Description |
Silicon MOS FETs (Small Signal) From old datasheet system
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File Size |
43.66K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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