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  0.0048 Datasheet PDF File

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    hitachi
Part No. 2SD2295
OCR Text ... -- -- -- Max -- 500 20 5 1.5 3.0 1.0 V V V s Unit V A Test conditions I E = 350 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A I C = 4.5 A, IB = 1.2 A I C = 4.5 A, IB = 1.2 A IF = 6 A I CP = 4 A, IB1 = 0.8 A, f H = 15.75 kHz 2 ...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 31.08K  /  5 Page

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    hitachi
Part No. 2SD2297
OCR Text ...- -- -- Max -- 500 25 5 1.5 3.5 0.8 V V V s Unit V A Test conditions I E = 400 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A I C = 5 A, IB = 1 A I C = 5 A, IB = 1 A IF = 6 A I CP = 5 A, IB1 = 1 A, f H = 15.75 kHz 2 2SD2297 3...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 31.30K  /  5 Page

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    hitachi
Part No. 2SD2423
OCR Text ...1. When using the ceramic board 0.7 mm thick (12.5 mm x 20 mm). Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 50 50 50 7 -- 2000 -- -- -- -- -- Typ -- -- -- -- -- -- -- -- -- -- -- Ma...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 38.40K  /  5 Page

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    Matsshita / Panasonic
Part No. 2SD601A 0357
OCR Text ...ary to 2SB0709A (2SB709A) 2.8 -0.3 +0.2 Unit: mm I Features G G G 0.650.15 +0.25 1.5 -0.05 0.650.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package, allowi...
Description Transistor
From old datasheet system

File Size 61.90K  /  3 Page

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    Matsshita / Panasonic
Part No. 2SD966 0345
OCR Text ...55 ~ +150 Unit V V V A A W C C 0.45-0.1 1.27 1.27 +0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature S...
Description Transistor
From old datasheet system

File Size 58.47K  /  3 Page

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    Sanyo
Part No. 2SJ277
OCR Text ...sions unit:mm 2093A [2SJ277] 0.9 10.2 4.5 1.3 11.5 1.6 20.9 1.2 11.0 9.4 0.8 8.8 0.4 1 2 3 2.7 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP unit:mm 2090A 0.8 10.2 [2SJ277] 4.5 1.3 1...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 95.97K  /  4 Page

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    hitachi
Part No. 2SJ530L2SJ530S 2SJ530
OCR Text ... * Low on-resistance R DS(on) = 0.08 typ. * 4V gate drive devices. * High speed switching. Outline 2SJ530(L),2SJ530(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak ...
Description Silicon P Channel MOS FET High Speed Power Switching
From old datasheet system

File Size 82.40K  /  9 Page

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    Matsshita / Panasonic
Part No. 2SK0614 0885
OCR Text ...D IDP PD Tch Tstg Ratings 80 20 0.5 1 750 150 -55 to +150 Unit V V A A mW C C 2.540.15 1.27 1.27 0.45 -0.1 +0.2 13.50.5 G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL 0.45 -0.1...
Description Silicon MOS FETs (Small Signal)
From old datasheet system

File Size 72.84K  /  3 Page

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    panasonic
Part No. 2SK0614 2SK614
OCR Text ...Features 5.00.2 4.00.2 0.70.1 0.70.2 12.90.5 G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL I Absolute Maximum Ratings (Ta = 25C) Parameter Drain to Source voltage Gate...
Description Small-signal device - Small-signal FETs - MOS FETs
From old datasheet system
TO-92-A1

File Size 73.34K  /  3 Page

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    Matsshita / Panasonic
Part No. 2SK1374 0896
OCR Text ...on-diode q Allowing 2.5V drive 0.65 0.425 1.250.1 0.425 1 2.00.2 1.30.1 0.65 3 2 s Absolute Maximum Ratings (Ta = 25C) 0.90.1 Drain to Source voltage Gate to Source voltage Drain current Max drain current ...
Description Silicon MOS FETs (Small Signal)
From old datasheet system

File Size 43.66K  /  3 Page

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