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				ETC[ETC]
Part No.	IS42S16400B IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42S16400B-7TL
OCR Text	...ency (2, 3 clocks) * Burst read/write operations capability * Burst termination by burst stop and precharge command * Byte controlled by LDQ...on any published information and before placing orders for products. Integrated Silicon Solution,...
Description	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
File Size	466.90K / 55 Page	View it Online	Download Datasheet

				ISSI[Integrated Silicon Solution, Inc] ISSI[Integrated Silicon Solution Inc]
Part No.	IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S16800A-7T IS42S16800A-7TI IS42S16800A-7TL IS42S16800A-7TLI IS42S32400A IS42S32400A-10T IS42S32400A-10TI IS42S32400A-10TL IS42S32400A-10TLI IS42S32400A-6T IS42S32400A-6TL IS42S32400A-7T IS42S32400A-7TI IS42S32400A-7TL IS42S32400A-7TLI IS42S81600A IS42S81600A-10T IS42S81600A-10TI IS42S81600A-10TL IS42S81600A-6T IS42S81600A-6TL IS42S81600A-7T IS42S81600A-7TI IS42S81600A-7TL IS42S81600A-7TLI 42S16800A
OCR Text	...ency (2, 3 clocks) * Burst read/write and burst read/single write operations capability * Burst termination by burst stop and precharge comm...on any published information and before placing orders for products. Integrated Silicon Solution,...
Description	16Meg x 8 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
File Size	534.78K / 61 Page	View it Online	Download Datasheet

				ISSI[Integrated Silicon Solution, Inc] ETC
Part No.	IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200-7T IS42S32200-7TI 42S32200
OCR Text	...ency (2, 3 clocks) * Burst read/write and burst read/single write operations capability * Burst termination by burst stop and precharge comm...on any published information and before placing orders for products. Integrated Silicon Solution,...
Description	512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
File Size	953.57K / 55 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text	...in.)* K9F5616Q0C : 60ns Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplex...On Auto-Read Operation * Safe Lock Mechanism * Package - K9F56XXX0C-YCB0/YIB0 48 - Pin TSOP I (12 x ...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	679.73K / 42 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text	...e Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplex...on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in t...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	601.33K / 34 Page	View it Online	Download Datasheet

				Tektronix, Inc. Alliance Semiconductor, Corp.
Part No.	AS7C164-20PC AS7C164-12PC
OCR Text	... with maximum power of 120 w. a write cycle is accomplished by asserting write enable (we ) and both chip enables (ce1 , ce2). data on the input pins i/o0-i/o7 is written on the rising edge of we (write cycle 1) or the active-to-inactive e...
Description	x8 SRAM x8的SRAM
File Size	117.46K / 8 Page	View it Online	Download Datasheet

				Samsung Electronics Inc SAMSUNG[Samsung semiconductor]
Part No.	K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text	...Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplex...on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serv...
Description	From old datasheet system EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC 32M x 8 Bit NAND Flash Memory
File Size	350.10K / 26 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text	...Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplex...on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serv...
Description	32M x 8 Bit NAND Flash Memory
File Size	607.24K / 29 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	LM75DM-33R2 LM75DM-50R2 ON0319 LM75
OCR Text	...t in the Address Byte is a Read-Write Bit. This bit is a 1 for a read operation or 0 for a write operation. Acknowledge (ACK) Stop AC...ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC res...
Description	2-Wire Serial Temperature Sensor and Monitor DIGITAL TEMP SENSOR-SERIAL, 9BIT(s), 3Cel, SQUARE, SURFACE MOUNT From old datasheet system
File Size	150.47K / 12 Page	View it Online	Download Datasheet

				Spansion, Inc. SPANSION LLC
Part No.	AM29F040B-120JF AM29F040B-90ED
OCR Text	...ics ? 5.0 v 10% for read and write operations ? minimizes system level power requirements ? manufactured on 0.32 m process technology ? compatible with 0.5 m am29f040 device ? high performance ? access times as fast as 55 ns ? low powe...
Description	Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:512K x 8; Package/Case:32-PLCC; Supply Voltage Max:5.5V; Access Time, Tacc:120ns; Mounting Type:Surface Mount RoHS Compliant: Yes 512K X 8 FLASH 5V PROM, 120 ns, PQCC32 Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:512K x 8; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.5V; Access Time, Tacc:90ns; Mounting Type:Surface Mount RoHS Compliant: Yes
File Size	564.73K / 36 Page	View it Online	Download Datasheet

For write-on Found Datasheets File :: 56261 Search Time::2.766ms
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