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For w rf Found Datasheets File :: 31072 Search Time::1.625ms
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				TriQuint Semiconductor
Part No.	TGA2237-SM TGA2237-SM-15
OCR Text	... provides greater than 1 0 w of saturated output power with greater than 1 3 db of large signal gain and greater than 5 0...rf ports allowing for simple system integration. dc blocks are required on both rf ports and...
Description	0.03 2.5GHz 10w GaN Power Amplifier
File Size	756.34K / 18 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	TGA2237-15
OCR Text	... 2.5 ghz and provides 1 0 w of saturated output power with 13 db of large signal gain and greater than 52 % power - add...rf ports allowing for simple system integration. dc blocks are required on both rf ports...
Description	0.03 2.5GHz 10w GaN Power Amplifier
File Size	603.17K / 16 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MAAP-007899-TR3000 MAAP-007899 MAAP-007899-001SMB MAAP-007899-TR1000
OCR Text	...220 Ohm 10 1.43 mm (L) 0.38 mm (w) 1.31 mm (L) 0.38 mm (w) 6.1 mm (L) 0.38 mm (w) 5.9 mm (L) 0.38 mm (w) Sample Board 6,7,8 R1 TL1 C19 TL2 C16 C15 C14 C11 C8 Jumper - - C17 C18 TL3 - - C12 C13 C10 C7...
Description	High Power Linear Amplifier 5.7 - 5.9 GHz
File Size	117.14K / 4 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	TGA2216-SM TGA2216-SM-15
OCR Text	...d provides greater than 1 0 w of saturated output power with greater than 1 3 db of large signal gain and greater than ...rf ports allowing for simple system integration. dc blocks are required on both rf ports and...
Description	0.1 3.0GHz 10w GaN Power Amplifier
File Size	764.97K / 18 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	TGA4512-SM-15
OCR Text	... power dissipation, pdiss 0.65 w rf input power, cw, 50 ? ,t = 25oc 18 dbm channel temperature, tch 200 o c mounting temperature (30 seconds) 260 o c storage temperature -40 to 150 operation of this device outsi de the parame...
Description	Ka-Band Driver Amplifier
File Size	623.84K / 13 Page	View it Online	Download Datasheet

				California Eastern Labs
Part No.	NE5511279A
OCR Text	... th thermal resistance ? 5 ? c/w channel to case g m transconductance ? 2.3 ? s v ds = 3.5 v, i ds = 900 ma bv dss drain to source breakd...rf performance is tested on several samples per wafer. wafer rejection criteria for sta...
Description	NECS 7.5 V UHF BAND rf POwER SILICON LD-MOS FET
File Size	234.41K / 4 Page	View it Online	Download Datasheet

				STMICROELECTRONICS
Part No.	MSC82306
OCR Text	...pac a package . p out = 5.5 w min. with 9.6 db gain description the msc82306 is a common base hermetically sealed silicon npn microwave ...rf amplifier operation msc82306 1. collector 3. emitter 2. base 4. base thermal data 1/4 electrica...
Description	S BAND, Si, NPN, rf POwER TRANSISTOR
File Size	97.85K / 4 Page	View it Online	Download Datasheet

				STMICROELECTRONICS
Part No.	MSC82302
OCR Text	...pac a package . p out = 1.8 w min. with 10.0 db gain description the msc82302 is a common base hermetically sealed silicon npn microwave...rf amplifier operation msc82302 1. collector 3. emitter 2. base 4. base thermal data 1/4 electrica...
Description	S BAND, Si, NPN, rf SMALL SIGNAL TRANSISTOR
File Size	95.60K / 4 Page	View it Online	Download Datasheet

For w rf Found Datasheets File :: 31072 Search Time::1.625ms
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