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For w power Found Datasheets File :: 357859    Search Time::6.046ms    
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    BR34L02FV-W

ROHM[Rohm]
Part No. BR34L02FV-w
OCR Text w Memory ICs 256x8 bit Electrically Erasable PROM (based on Serial Presence Detect) BR34L02FV-w The BR34L02FV-w is a 2k bit EEPROM mem...power supply (1.8V to 5.5V) 3) Two wire serial interface 4) Page write Function (16byte) 5) write Pr...
Description 256? bit Electrically Erasable PROM
From old datasheet system

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    List of Unclassifed Man...
Part No. TwS-DR-w TwS-SR-w
OCR Text ... part number description tws-dr-w white wireless dual rocker switch tws-sr-w white wireless single rocker switch agency compliance fcc szv-p...power radio frequency technology allows them to communicate wirelessly with other zennet wireles...
Description ZenNet Self-powered wireless wall Switches

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    M95320-W M95320-S 5711

STMicroelectronics
Part No. M95320-w M95320-S 5711
OCR Text ...M95xxx - 2.5 to 5.5V for M95xxx-w - 1.8 to 5.5V for M95xxx-R 8 1 PDIP8 (BN) 0.25 mm frame s 10MHz, 5MHz or 2MHz clock rate (depend...power mode. After Power-up, a falling edge on Chip Select (S) is required prior to the start of any ...
Description 64KBIT AND 32KBIT SERIAL SPI BUS EEPROM wITH HIGH SPEED CLOCK
From old datasheet system

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    M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3

意法半导
EEPROM
STMicroelectronics N.V.
Part No. M24C08-w M24C08-R M24C08-wMN6 M24C08-wMN6TP M24C04wMN1T M24C04wMN3T M24C04wMN6T M24C02-wMN3_S M24C02-wMN3G_S M24C02-wMN3P M24C02-wMN3P_S M24C02-wMN3T_S M24C02-wMN3TG_S M24C02-wMN6_w M24C04-wMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/w M24C08-RBN6/w M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-Dw6T M24C16-Dw3T M24C16-SDw6T M24C16-SDw3T M24C16-SDS3T M24C16-SDS6T M24C04-wBN6TP/w M24C08-MN6T M24C08-MN3T M24C02-wBN6T/w M24C04-RMN3T/w M24C04-RBN6TP/w M24C04-wBN6TP/S M24C08-wDS3 M24C08-wDS3G M24C08-wDS6 M24C08-wMN6TP/w M24C08-wDw6P M24C04-RMN6TP/S M24C08-wDS6G M24C08-wDS6P M24C08-wDw6G M24C08-wDw3 M24C08-RBN6T/w M24C08-wDw3P M24C08-wDS3/w M24C04-RMN3TP/S M24C08-wDw3G M24C08-wDS3/S M24C01-RBN6TP/w M24C08-wDS3P M24C01-wMN3TP/S M24C01-wDw6TP/S M24C01-wMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/w M24C04-RDS3G M24C04-wBN6T/w M24C04-RDS6P M24C04-RDw3 M24C04-RDw6 M24C04-wMN6TP/w M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-wMN3/S M24C02-wMN6/w M24C08-wBN3G/S M24C16-wBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-wBN3G/S M24C02-RBN3G/S M24C02-wBN3G/S M24C04-RBN3G/S M24C04-wBN3G/S
OCR Text ...ltage: - 2.5 to 5.5V for M24Cxx-w - 1.8 to 5.5V for M24Cxx-R write Control Input BYTE and PAGE wRITE (up to 16 Bytes) RANDOM and SEQUENTIAL ...Power-up, a Power On Reset (POR) circuit is included. At Power-up (continuous rise of VCC), the devi...
Description 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM
Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
CRYSTAL 9.84375MHZ 10PF SMD
UHF power transistor
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mw; Polarity: NPN ; VCEO max: 8 V
CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD
MMIC variable gain amplifier
AB 3C 3#12 SKT RECP
Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
XTL, OSC, 50.000 MHZ, 100PPM
Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
CONNECTOR ACCESSORY
PNP/PNP matched double transistors
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP
AB 17C 17#16 PIN RECP
45 V, 100 mA NPN general-purpose transistors
NPN/PNP general purpose transistor - Description: Matched Pair
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043Mw015
CRYSTAL 4.897MHZ 20PF SMD
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
POT 200 OHM 3/4 RECT CERM MT
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 600 V
Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) RoHS Compliant: Yes
CRYSTAL 6.7458MHZ 20PF SMD
Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
RES ARRAY 24 OHM 8TRM 4RES SMD
SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; Package: SOIC-w; No of Pins: 8; Container: Box
NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300
High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V
Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V
NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mw; Polarity: NPN ; VCE: 10 V; VThyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mw; Polarity: NPN ; VCEO max: 8 V
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V
AB 4C 4#12 PIN PLUG
Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz
Silicon PIN diode
NPN 14 GHz wideband transistor
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
HDwR PLATE SER 3 FRNT MNT BLK
OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD
Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V
Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V
16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS
HDwR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
RECTIFIER SBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM

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    Purdy Electronics Corpo...
Part No. AND491GST3-3V-w-LED
OCR Text ...cs.com 04/24/12 1 and491gst3-3v-w-led intelligent character display and491gst3-3v-w-led intelligent character display the and491gst3-3v-w-le...power supply for logic vdd - vss C 2.7 3.3 4.5 v input voltage vil l level 0 C- 0.6 v vih h level 2....
Description Intelligent Character Display

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    MCH3474-TL-W MCH3474-TL-H

ON Semiconductor
Part No. MCH3474-TL-w MCH3474-TL-H
OCR Text ...te (900mm 2 0.8mm) p d 1 w junction temperature tj 150 c storage temperature tstg ? 55 to +150 c note 1 : stresses exceeding...power mosfet 30v, 50m ? , 4a, single n-channel v dss r ds (on) max i d max 30v 50m ? @ 4.5v 4a...
Description Single N-Channel Power MOSFET

File Size 528.45K  /  4 Page

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    M95256-W M95256-V M95256-S 5798

STMicroelectronics
Part No. M95256-w M95256-V M95256-S 5798
OCR Text ...M95256 - 2.5 to 5.5V for M95256-w - 1.8 to 3.6V for M95256-S s High speed - 5MHz Clock Rate, 10ms write Time (current product: identif...power mode. After Power-up, a falling edge on Chip Select (S) is required prior to the start of any ...
Description 128KBIT SERIAL SPI BUS EEPROM wITH HIGH SPEED CLOCK
From old datasheet system

File Size 226.33K  /  35 Page

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    M24512-W M24512-S

ST Microelectronics
STMicroelectronics
Part No. M24512-w M24512-S
OCR Text ...24512 - 2.5V to 5.5V for M24512-w - 1.8V to 3.6V for M24512-S s 8 1 PDIP8 (BN) 0.25 mm frame s s s s s s s s write Control Inpu...Power On Reset: V CC Lock-Out write Protect In order to prevent data corruption and inadvertent writ...
Description 512 KBIT SERIAL I²C BUS EEPROM
512 KBIT SERIAL I2C BUS EEPROM

File Size 132.50K  /  18 Page

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    List of Unclassifed Man...
Part No. LSw3-GT-5EP-w
OCR Text ...s - 3-year warranty lsw3-gt-5ep/w switching hub gigabit ethernet switch - 5 port this switch's compact, lightweight design means that it can...power consumption effciently energy-saving features automatically reduce power consumption without...
Description Gigabit Ethernet Switch - 5 Port

File Size 355.84K  /  2 Page

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