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  w pd Datasheet PDF File

For w pd Found Datasheets File :: 82838    Search Time::3.86ms    
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    IRF1405L IRF1405S

IRF[International Rectifier]
Part No. IRF1405L IRF1405S
OCR Text ... 10 lbf*in (1.1N*m) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient (PCB m...pd (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1....
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?)
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

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    IRF1405

International Rectifier
Part No. IRF1405
OCR Text ... 10 lbf*in (1.1N*m) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...pd (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1....
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)

File Size 114.28K  /  9 Page

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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ... (1.6mm from case ) Units A w w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient(PCB ...pd (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1....
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

File Size 158.12K  /  11 Page

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    IRF1407

International Rectifier
Part No. IRF1407
OCR Text ... 10 lbf*in (1.1N*m) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...pd (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1....
Description Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)
POwER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)

File Size 126.10K  /  9 Page

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    NB2760A NB2760ASNR2 NB2760ASNR2G

ON Semiconductor
Part No. NB2760A NB2760ASNR2 NB2760ASNR2G
OCR Text ... 318G E03AYwG G 1 E03 A Y w G = Specific Device Code =Assembly Location = Year = work week = Pb-Free Package (Note: Microdot may...pd VDD XIN/CLKIN XOUT Crystal Oscillator Frequency Divider Feedback Divider Modulation PLL ...
Description Low Power, Reduced EMI Clock Synthesizer(低功降低EMI时钟合成

File Size 113.16K  /  8 Page

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    74ALVCH162240TTR

STMICROELECTRONICS
Part No. 74ALVCH162240TTR
OCR Text ...ld provided on data inputs n 26 w serie resistors in outputs n operating voltage range: v cc (opr) = 1.65v to 3.6v n pin and function compa...pd is defined as the value of the ics internal equivalent capacitance which is calculated from the o...
Description ALVC/VCX/A SERIES, QUAD 4-BIT DRIVER, INVERTED OUTPUT, pdSO48

File Size 229.34K  /  10 Page

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ... 10 lbf*in (1.1N*m) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...pd (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1....
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

File Size 179.50K  /  9 Page

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    NCV4264 NCV4264ST50T3G

ON Semiconductor
ONSEMI
Part No. NCV4264 NCV4264ST50T3G
OCR Text ...tures. Features TAB 1 2 3 A Y w V64_5x x G http://onsemi.com MARKING DIAGRAM SOT-223 ST SUFFIX CASE 318E * * * * * * * * * 5....pd(max) + [VIN(max) * VOUT(min)] @ IQ(max) ) VI(max) @ Iq (eq. 1) The error amplifier compares t...
Description 150 mA Low Dropout Linear Regulator(150mA浣??宸?嚎?хǔ???)

File Size 112.73K  /  8 Page

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1B902 IRF1902TR
OCR Text ... 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM pd @TA = 25C pd @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current,...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)

File Size 105.83K  /  9 Page

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    IRF2204

International Rectifier
Part No. IRF2204
OCR Text ... 10 lbf*in (1.1N*m) Units A w w/C V mJ A mJ C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased...pd (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1....
Description 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 138.67K  /  9 Page

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