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F3315 1625865 TH1356 STUK07F DDTA143 P6SMBJ11 HETA1663 MC145041
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    IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632S5PFI IDT71V632S5PF IDT71V632S6PF IDT71V632S6PF8 IDT71V632S6PFG IDT71V

IDT[Integrated Device Technology]
Part No. IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632S5PFI IDT71V632S5PF IDT71V632S6PF IDT71V632S6PF8 IDT71V632S6PFG IDT71V632S6PFG8 IDT71V632S6PFI IDT71V632S6PFI8 IDT71V632S5PF8 IDT71V632S5PFG IDT71V632S5PFG8 IDT71V632S5PFI8 IDT71V632S7PF IDT71V632S7PF8 IDT71V632S7PFG IDT71V632S7PFI IDT71V632S7PFI8 IDT71V632S8PF IDT71V632S8PF8
OCR Text ... 3619 tbl 03 (3) C C C w mA 3619 tbl 05 Recommended DC Operating Conditions Sym bol V DD V DDQ V SS, V SSQ V IH V IH V IL Param eter Co re S up p ly Vo ltag e I/O S up p ly Vo ltag e G ro und Inp ut Hig h Vo ltag e -- Inp uts ...
Description 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter/ Single Cycle Deselect
3.3V 64K x 32 Pipelined
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter Single Cycle Deselect

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    IRF140SMD

International Rectifier
Seme LAB
Part No. IRF140SMD
OCR Text ...RDS(on) FEATURES 100V 13.9A w 0.077w 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) *...end of source bond wire) nH Notes 1) Pulse Test: Pulse width 300ms, d 2% 2) Repetitive Ratin...
Description N-CHANNEL POwER MOSFET

File Size 22.30K  /  2 Page

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    IRF150SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF150SMD
OCR Text ...) RDS(on) FEATURES 100V 19A w 0.070w 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) *...end of source bond wire) nH Notes 1) Pulse Test: Pulse width 300ms, d 2% 2) Repetitive Ratin...
Description N-CHANNEL POwER MOSFET

File Size 22.29K  /  2 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text ...RDS(on) FEATURES 200V 13.9A w 0.180w 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) *...end of source bond wire) nH Notes 1) Pulse Test: Pulse width 300ms, d 2% 2) Repetitive Ratin...
Description    N.CHANNEL POwER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

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    IRF250SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF250SMD
OCR Text ...) RDS(on) FEATURES 200V 14A w 0.100w 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) *...end of source bond wire) nH Notes 1) Pulse Test: Pulse width 300ms, d 2% 2) Repetitive Ratin...
Description N.CHANNEL POwER MOSFET

File Size 23.37K  /  2 Page

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    L6562 FN9012 ISL6562 ISL656062E ISL656062EVAL1 ISL6562CB ISL6562CB-T

http://
INTERSIL[Intersil Corporation]
Part No. L6562 FN9012 ISL6562 ISL656062E ISL656062EVAL1 ISL6562CB ISL6562CB-T
OCR Text ...rmal Resistance (Note 1) JA (oC/w) SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106 Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to...
Description Microprocessor CORE Voltage Regulator Two-Phase Buck PwM Controller
PwM Controller, 2-Phase Current Mode, 5-Bit VID, Reg ?.8%, 1.05-1.825 Voltage, VRM 8.5

File Size 40.63K  /  5 Page

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