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				PANASONIC[Panasonic Semiconductor]
Part No.	2SB1180 2SB1180A
OCR Text	...5 1.3 150 -55 to +150 C C V A A w V Unit V 0.750.1 0.40.1 2.30.2 4.60.4 1 2 3 0.90.1 0 to 0.15 Collector-emitter voltage 2SB1180 (base open) 2SB1180A Emitter-base voltage (Collector open) Collector current Peak collector current Co...
Description	Silicon PNP epitaxial planar type darlington
File Size	84.71K / 4 Page	View it Online	Download Datasheet

				TY Semicondutor
Part No.	BT138
OCR Text	... - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operatin...base half cycle - - 2.0 k/w r th j-a thermal resistance in free air - 60 - k/w junction to ambient s...
Description	TRANSISTOR
File Size	154.20K / 5 Page	View it Online	Download Datasheet

				Philips
Part No.	BUK9226-100B
OCR Text	...e ds(al)s 147 mj n r dson =22m w (typ) n i d 48 a n p tot 150 w table 1: pinning - sot428 (d-pak), simpli?ed outline and symbol pin descr...base; connected to drain (d) mbk091 top view 13 mb 2 s d g mbb076 philips semiconductors buk9226-1...
Description	TrenchMOS (tm) logic level FET
File Size	66.88K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB561
OCR Text	... 150 -55 to +150 Unit V V V A A w C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer r...
Description	Silicon PNP Epitaxial
File Size	29.37K / 6 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SB562
OCR Text	... 150 -55 to +150 Unit V V V A A w C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer r...
Description	Silicon PNP Epitaxial
File Size	29.50K / 6 Page	View it Online	Download Datasheet

				TY Semicondutor
Part No.	BT139
OCR Text	... - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operatin...base half cycle - - 1.7 k/w r th j-a thermal resistance in free air - 60 - k/w junction to ambient s...
Description	TRANSISTOR
File Size	154.16K / 5 Page	View it Online	Download Datasheet

				New Jersey Semiconductors
Part No.	2N2914L
OCR Text	...on at 25c case temperature 0.75 w at 100 c cete temperature 0.43 w at 2sc ambient temperature 0.3w maximum volugei and current vrjgo collector to base voltege vc60 collector to emitter voltage (note 4) emitter to bate voltage collector curr...
Description	Bipolar Transistor
File Size	60.92K / 1 Page	View it Online	Download Datasheet

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