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For w adc Found Datasheets File :: 13857 Search Time::1.172ms
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				ON Semiconductor
Part No.	NSS40301MZ4T1G NSS40301MZ4T3G NSV40301MZ4T1G
OCR Text	... = 25 c (note 2) p d 2.0 0.80 w operating and storage junction temperature range t j , t stg ? 55 to + 150 c stresses exceeding maximum r...adc) v ceo(sus) 40 ? ? vdc emitter?base voltage (i e = 50 adc, i c = 0 adc) v ebo 6.0 ? ? vdc c...
Description	Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat)
File Size	83.20K / 6 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	Mw7IC3825GNR1 Mw7IC3825NBR1 Mw7IC3825NR1 Mw7IC3825NR110
OCR Text	...mw7ic3825nbr1 3400--3600 mhz, 5 w avg., 28 v wimax rf ldmos wideband integrated power amplifiers case 1886--01 to--270 wb--16 plastic mw7ic3...adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source l...
Description	RF LDMOS wideband Integrated Power Amplifiers
File Size	1,158.93K / 23 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	AGR18030EF
OCR Text	w, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused meta...adc w w/C C C Figure 1. Available (flanged) Packages Features Typical performance ratings for...
Description	Lateral MOSFET
File Size	410.68K / 9 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MMG05N60D-D
OCR Text	...nit Vdc Vdc Vdc adc watt C C/w C UNCLAMPED DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS (TC 150C) Single Pulse Drain-to-Source Avalanche Energy - Starting @ TC = 25C Energy - Starting @ TC = 125C VCE = 100 V, VGE = 15 V, Peak IL = 2.0 ...
Description	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
File Size	121.44K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MJw16206-D
OCR Text	...erating and Storage Temperature w(BER) PD mjoules watts w/_C _C 150 39 1.49 TJ, Tstg -55 to +150 (c) Semiconductor Components Industries, L...adc, IB = 1.5 adc, LB = 0.5 H) DC Current Gain (IC = 1.0 adc, VCE = 5.0 Vdc) (IC = 10 adc, VCE = ...
Description	SCANSwITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors POwER TRANSISTORS
File Size	156.00K / 12 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NVF6P02
OCR Text	...sipation @ t a = 25 c p d 8.3 w operating and storage temperature range t j , t stg ? 55 to +150 c single pulse drain ? to ? source avala...adc) temperature coefficient (positive) v (br)dss ? 20 ? ? 25 ? 11 ? ? vdc mv/ c zero gate voltage ...
Description	Power MOSFET
File Size	129.61K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NVF6P02T3G
OCR Text	...sipation @ t a = 25 c p d 8.3 w operating and storage temperature range t j , t stg ? 55 to +150 c single pulse drain ? to ? source avala...adc) temperature coefficient (positive) v (br)dss ? 20 ? ? 25 ? 11 ? ? vdc mv/ c zero gate voltage ...
Description	Power MOSFET -10 Amps, -20 Volts
File Size	109.19K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MMSF3350-D
OCR Text	...8 CASE 751 Style 12 1 XXX A L Y w = Specific Device Code = Assembly Location = wafer Lot = Year = work week XXXXXX ALYw (c) Semiconductor...adc adc adc adc watts mw/C C/w Continuous Source Current (Diode Conduction) Total Power Dissipati...
Description	waveFETE HDTMOSE Single N-Channel Field Effect Transistor Power Surface Mount Products
File Size	137.16K / 12 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NT14N03R
OCR Text	...5 -55 to 150 260 Unit Vdc Vdc C/w w A A A C/w w A C/w w A C C 12 3 CASE 369C DPAK (Surface Mount) STYLE 2 S 4 4 G 1 2 3 CASE 369D DPAK (S...adc) (VGS = 10 Vdc, ID = 5 adc) Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 5 adc) DYNAMIC...
Description	Power MOSFET 14 A, 25 V N-Channel DPAK
File Size	57.17K / 6 Page	View it Online	Download Datasheet

For w adc Found Datasheets File :: 13857 Search Time::1.172ms
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