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  vds-12v Datasheet PDF File

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    2N5484 2N5485 2N5486 SST5484 SST5485 SST5486

Vishay Siliconix
Vishay Intertechnology,Inc.
Part No. 2N5484 2N5485 2N5486 SST5484 SST5485 SST5486
Description High Frequency/General Purpose
N-Channel JFETs
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p

File Size 52.89K  /  7 Page

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    美丽微半导体有限公司
Part No. FM1020-T FM1030-T FM1040-T
Description Chip Schottky Barrier Diodes - Silicon epitaxial planer type
DC-DC Converter; Supply Voltage:12V; Output Voltage:12V; Number of Outputs:1; Power Rating:1W; Mounting Type:PC Board Surface Mount; External Depth:6.6mm; External Width:7.7mm; Leaded Process Compatible:Yes RoHS Compliant: Yes

File Size 77.34K  /  2 Page

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    Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
Part No. RM500DZ-M RM500DZ-H RM500UZ-M RM500DZ-24 RM500DZ-2H RM500UZ-24 RM500UZ-2H RM500UZ-H
Description Rectifier Diodes, 800V
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HIGH POWER GENERAL USE INSULATED TYPE 大功率常规使用绝缘型
BATTERY SEALED LEAD ACID 12V 5AH 大功率常规使用绝缘型
BATT SEALED LEAD ACID 12V 50AH 大功率常规使用绝缘型

File Size 50.03K  /  3 Page

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    AN79L05 AN79L05M AN79LXXM AN79L04 AN79L05_M AN79L06 AN79L07 AN79L08 AN79L08_M AN79L08M AN79L09 AN79L09_M AN79L09M AN79L1

Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. AN79L05 AN79L05M AN79LXXM AN79L04 AN79L05_M AN79L06 AN79L07 AN79L08 AN79L08_M AN79L08M AN79L09 AN79L09_M AN79L09M AN79L10 AN79L12 AN79L12_M AN79L12M AN79L15 AN79L15_M AN79L15M AN79L18 AN79L20 AN79L24 AN79LXX AN79L15/M AN79L08/M AN79L05/M AN79L12/M AN79L09/M
Description    3-pin negative output voltage regulator (100 mA type)
3-pin negative output voltage regulator (100 mA type) 5 V FIXED NEGATIVE REGULATOR, PBCY3
3-pin negative output voltage regulator (100 mA type) 3针负输出电压调节器(100毫安型)
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:60A; On-Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60A; On-Resistance, Rds(on):0.0065ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60A; On-Resistance, Rds(on):5.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
General-Purpose Linear IC - Voltage Regulater - 3-Pin Regulator
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):0.017ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No

File Size 169.94K  /  12 Page

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    FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. RF1K49092
Description 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET?Power MOSFET
3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features 3.5A, 12V (N-Channel)
3.5A/2.5A 12V 0.050/0.130 Ohm Logic Level Complementary LittleFET Power MOSFET
3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET⑩ Power MOSFET
3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFETPower MOSFET

File Size 455.72K  /  14 Page

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    BF1009SR BF1009S

INFINEON[Infineon Technologies AG]
Part No. BF1009SR BF1009S
Description RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand
Silicon N-Channel MOSFET Tetrode

File Size 249.05K  /  5 Page

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    M28F220-90M1TR M28F220-90M6TR -M28F220 STMICROELECTRONICS-M28F220-120M1 M28F220-70M3

STMICROELECTRONICS
Part No. M28F220-90M1TR M28F220-90M6TR -M28F220 STMICROELECTRONICS-M28F220-120M1 M28F220-70M3
Description 256K X 8 FLASH 12V PROM, 90 ns, PDSO44
2Mbit (256Kb x8 or 128Kb x16, Boot Block) Flash Memory(2Mb???瀛???ī
256K X 8 FLASH 12V PROM, 70 ns, PDSO44

File Size 233.05K  /  32 Page

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    Toshiba, Corp.
Lattice Semiconductor, Corp.
Part No. Z2603 Z2612 Z2610 Z2613
Description TRANSFORMER 6VA 2X 18V
TRANSFORMER 4VA 2X 12V 12V的变压器4VA 2
TRANSFORMER 6VA 2X 24V 24V的变压器6VA
TRANSFORMER 6VA 2X 12V 12V的变压器6VA 2

File Size 71.17K  /  2 Page

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    24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. 24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST24C16B1TR ST24C16B3TR ST24C16B5TR ST24C16B6TR ST24C16M1TR ST24C16M3TR ST24C16M5TR ST24C16M6TR ST24W16 ST24W16B1TR ST24W16B3TR ST24W16B5TR ST24W16B6TR ST24W16M1TR ST24W16M3TR ST24W16M5TR ST24W16M6TR ST25W16 ST25W16B1TR ST25W16B3TR ST25W16B5TR ST25W16B6TR ST25W16M1TR ST25W16M3TR ST25W16M5TR ST25W16M6TR
Description MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM

File Size 125.39K  /  17 Page

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    Intersil
Part No. HIP6601B HIP6603B HIP6604B
Description MOSFET Driver, Dual N-Channel, 730mA, 12V Low Side, 5/12V High Side, use with Multiphase Controller, POR=7.6V
MOSFET Driver, Dual N-Channel, 730mA, 5/12V Low Side, 5/12V High Side, use with Multiphase Controller, POR=7.6V
MOSFET Driver, Dual N-Channel, 730mA, 12V Low Side and 5/12V High Side or 5/12V High and Low Side, use with Multiphase Controller, POR=7.6V

File Size 279.71K  /  12 Page

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