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Mosel Vitelic
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| Part No. |
V54C365164VL
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| OCR Text |
...nment (top view) nc vss nc vssq vddq dq3 nc nc nc vssq vddq dq2 vss nc dqm nc cke clk a11 ? a8 a9 a6 a7 a4 a5 nc vss dq7 vss nc vssq vddq dq...2 4096 x 256 x16bit column decoder sense amplifier & i(o) bus row decoder memory array bank 3 4096 x... |
| Description |
HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16
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| File Size |
706.89K /
56 Page |
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it Online |
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PROMOS TECHNOLOGIES INC
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| Part No. |
V58C2256164SCE5BI
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| OCR Text |
... c d e f g h j k l m vssq nc nc vddq dq3 nc vddq nc vssq vdd nc dq0 nc vddq nc dq1 vssq nc nc nc vddq nc vdd we cas ras ba1 ba0 a0 a10/ap a2...2.5v and +2.6v for ddr400) v ss ground v ddq power for i/o?s (+2.5v and +2.6v for ddr400) v ssq grou... |
| Description |
16M X 16 DDR DRAM, 0.65 ns, PDSO66
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| File Size |
915.14K /
61 Page |
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it Online |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HY5PS12821F-Y6
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| OCR Text |
... vdd = 1.8v, 2.5v (optional) ? vddq = 1.8v +/- 0.1v ? all inputs and outp uts are compatible with sstl_18 interface ? fully differential clock inputs (ck, /ck) operation ? double data rate interface ? source synchronous - data transaction... |
| Description |
64M X 8 DDR DRAM, PBGA60
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| File Size |
885.74K /
67 Page |
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it Online |
Download Datasheet |
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PROMOS TECHNOLOGIES INC
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| Part No. |
V58C2256164SCE5B
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| OCR Text |
... c d e f g h j k l m vssq nc nc vddq dq3 nc vddq nc vssq vdd nc dq0 nc vddq nc dq1 vssq nc nc nc vddq nc vdd we cas ras ba1 ba0 a0 a10/ap a2...2.4 may 2006 66 pin plastic tsop-ii pin configuration top view pin names ck, ck differential clock i... |
| Description |
16M X 16 DDR DRAM, 0.65 ns, PDSO66
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| File Size |
917.36K /
61 Page |
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it Online |
Download Datasheet |
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INTEGRATED SILICON SOLUTION INC
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| Part No. |
IS42SM32400E-75EBLI
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| OCR Text |
...3v C 2.5v vdd and 3.3v C 2.5v vddq memory systems containing 134,271,728 bits. internally confgured as a quad-bank dram with a synchronous interface. the 128mb sdram includes an auto refresh mode, and a power-saving, power-down mode. al... |
| Description |
4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
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| File Size |
764.69K /
26 Page |
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it Online |
Download Datasheet |
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NANYA TECHNOLOGY CORP
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| Part No. |
NT5DS128M4BT-6K
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| OCR Text |
... x 4 1 vssq nc nc nc nc vref nc vddq vssq vddq vssq vss clk a12 a11 a8 a6 a4 2 vss dq3 nc dq2 dqs dqm clk cke a9 a7 a5 vss 3 vdd dq0 nc dq1 nc nc we ras ba1 a0 a2 vdd 7 nc vssq vddq vssq vddq vdd cas cs ba0 a10/ ap a1 a3 8 vddq nc nc nc nc ... |
| Description |
128M X 4 DDR DRAM, 0.7 ns, PDSO66
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| File Size |
2,500.58K /
80 Page |
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it Online |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HY5DU561622ELTP-L
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| OCR Text |
...26 27 28 29 30 31 32 33 vdd dq0 vddq dq1 dq2 vssq dq3 dq4 vddq dq5 dq6 vssq dq7 nc vddq ldqs nc vdd nc ldm /we /cas /ras /cs nc ba0 ba1 a10/...2 input, but will detect an lvcmos low level after vdd is applied. /cs input chip select: enables ... |
| Description |
16M X 16 DDR DRAM, 0.75 ns, PDSO66
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| File Size |
235.08K /
29 Page |
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it Online |
Download Datasheet |
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