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Panasonic
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| Part No. |
2SA2028
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| OCR Text |
...ackage, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing absolute maximum ratings t a = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo ? 20 v collector-... |
| Description |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
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| File Size |
44.41K /
2 Page |
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it Online |
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Panasonic
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| Part No. |
2SB1462L
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| OCR Text |
...ackage, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing absolute maximum ratings t a = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo ? 60 v collector-... |
| Description |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
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| File Size |
40.91K /
2 Page |
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it Online |
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Panasonic
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| Part No. |
2SA2010
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| OCR Text |
...ackage, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing . absolute maximum ratings t a = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo ? 15 v collecto... |
| Description |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
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| File Size |
59.41K /
3 Page |
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it Online |
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Panasonic
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| Part No. |
2SD2216L
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| OCR Text |
...ackage, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing. absolute maximum ratings t a = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo 60 v collector-e... |
| Description |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
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| File Size |
40.89K /
2 Page |
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it Online |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
UNRL115 UNRL110 UNRL111 UNRL113 UNRL114
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| OCR Text |
...ackage, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing. * The PCB mounting area is 1/10 of that of lead type package (3-pin MINI-type package).
4 1.000.05 1
0.600.05 4
0.200.03
1
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| Description |
Silicon PNP epitaxial planer type
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| File Size |
115.00K /
6 Page |
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it Online |
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E2V TECHNOLOGIES PLC
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| Part No. |
CCD60-01-1-B89
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| OCR Text |
...ming. the e2v technologies back-thinning process ensures high quantum efficiency over a wide range of wavelengths. the device functions by converting photons to charge in the image area during the integration time period, then transferring ... |
| Description |
IMAGE SENSOR-CCD, 128(H) X 128(V) PIXEL, RECTANGULAR, THROUGH HOLE MOUNT
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| File Size |
100.64K /
13 Page |
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it Online |
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Panasonic Battery Panasonic Battery Group
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| Part No. |
FJ3P02100L FK3P02110L
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| OCR Text |
...es in cell technology and wafer thinning fabrication have lead to silicon with a 110nm fne trench cell that provides 47% lower r ds (on) over the same sized conventional chip. by using this technology, this mosfet series achieves highe... |
| Description |
Power CSP MOSFET Power CSP MOSFET’s
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| File Size |
179.92K /
1 Page |
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it Online |
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New Japan Radio Co., Ltd.
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| Part No. |
NJU7342
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| OCR Text |
...) which provide downsizing and thinning in high power motor applications. package outline features ? operating voltage v dd =2.4 to 5.5v ? low operating current ? low saturation output voltage ... |
| Description |
Single-phase DC Brushless Motor Driver IC
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| File Size |
63.85K /
5 Page |
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it Online |
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