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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
GT15M321
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| Description |
INSULATED GATE bipolar TRANSISTOR silicon N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS TOSHIBA INSULATED GATE bipolar TRANSISTOR silicon N CHANNEL IGBT
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| File Size |
257.03K /
6 Page |
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it Online |
Download Datasheet
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Vishay Beyschlag VISHAY SEMICONDUCTORS
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| Part No. |
BYM10-1000/26 BYM10-600/46 BYM10-100/26 GL41T-HE3
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| Description |
1 A, 1000 V, silicon, signal DIODE, DO-213AB PLASTIC PACKAGE-2 1 A, 600 V, silicon, signal DIODE, DO-213AB PLASTIC PACKAGE-2 1 A, 100 V, silicon, signal DIODE, DO-213AB PLASTIC PACKAGE-2 1 A, 1300 V, silicon, signal DIODE, DO-213AB
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| File Size |
327.20K /
4 Page |
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it Online |
Download Datasheet
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Vishay Beyschlag VISHAY SEMICONDUCTORS
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| Part No. |
GP02-25-E3/53 GP02-25-E3/3 GP02-25-E3/4 GP02-25-E3/51 GP02-25-HE3 GP02-20 GP02-20-E3
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| Description |
0.25 A, 2500 V, silicon, signal DIODE, DO-204AL ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN 0.25 A, 2500 V, silicon, signal DIODE, DO-204AL LEAD FREE, PLASTIC, DO-41, 2 PIN 0.25 A, 2000 V, silicon, signal DIODE, DO-204AL
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| File Size |
289.83K /
4 Page |
View
it Online |
Download Datasheet
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Price and Availability
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