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NEC Corp.
NEC[NEC]
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| Part No. |
UPA880TS-T3 UPA880TS
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| OCR Text |
...Ge transistor fT = 18 GHz TYP., s21e2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz Q2: Low phase distortion SiGe transistor suited for OSC applications fT = 10 GHz TYP., s21e2 = 9 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz * 6-pin super l... |
| Description |
NPN SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE)
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| File Size |
49.59K /
6 Page |
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it Online |
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SANYO
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| Part No. |
SBFP420D
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| OCR Text |
... voltage operation. High Gain : s21e2=17dB typ (f=1.8GHz). 0.2 0.05 Ultrasmall (1008 size), thin (0.6mm) leadless package.
3
0.05
[SBFP420D]
0.5
0.3 0.05 0.6
0.2 4
2
1
0.3
(Bottom View)
0.05
1 : Base 2 : Emitter 3 ... |
| Description |
UHF to C Band Low Noise Amplifier, Oscillation Applications
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| File Size |
51.73K /
13 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
MT6L54E MT3S06S MT3S08T
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| OCR Text |
...on gain Symbol ICBO IEBO hFE fT s21e2 (1) S21e (2) NF (1) NF (2) Cre
2
Test Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCE = 3 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz VCE = 1 ... |
| Description |
VHF-UHF Band Low Noise Amplifier Application
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| File Size |
85.76K /
3 Page |
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it Online |
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SANYO[Sanyo Semicon Device]
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| Part No. |
FH201
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| OCR Text |
...
10
16 14 12 10 8 6 4 2 0
s21e2 -- IC
[Tr1] VCE=5V f=1GHz
8
Noise Figure, NF - dB
6
4
2
0 5 7 1.0 2 3 5 7
Collector Current, IC - mA
10
2
3
2
2
3
5
7
1.0
2
3
5
7
10
... |
| Description |
VCO OSC Circuit Applications
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| File Size |
74.16K /
8 Page |
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it Online |
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SANYO
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| Part No. |
2SC5781
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| OCR Text |
...rd Transfer Gain, S21e -- dB
s21e2 -- IC
f=1GHz
2 Forward Transfer Gain, S21e -- dB
12
s21e2 -- IC
f=2GHz
14
3V V CE=
10
1V
12
V CE=3V
8
1V
6
10
8
4
6
4 2 1.0
2
2
3
5
7
10
... |
| Description |
Ultrahigh-Frequency Transistors
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| File Size |
42.83K /
8 Page |
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it Online |
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