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  rm i Datasheet PDF File

For rm i Found Datasheets File :: 12701    Search Time::1.906ms    
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    APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL

ADPOW[Advanced Power Technology]
Part No. APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL
OCR Text ...s) AL iC HN EC iON E T AT NC rm VA FO AD iN iD = iD [Cont.] @ 25C VDD = 0.5 VDSS RG = 1.6W iD = iD [Cont.] @ 25C MiN TYP 2 ns MAX...i = 22A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device it...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.44K  /  2 Page

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    APT50M50JLC APT5010JLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50M50JLC APT5010JLC
OCR Text ...y AL iC HN EC ON Ti ED AT NC rm VA FO AD iN 500 77 308 30 40 700 5.6 -55 to 150 300 77 50 (Repetitive and Non-Repetitive) 1 4 Volts...i D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 iD[Cont...
Description POWER MOS Vi 500V 77A 0.050 Ohm
Power MOS ViTM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS ViTM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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    APT50M50L2FLL

ADPOW[Advanced Power Technology]
Part No. APT50M50L2FLL
OCR Text ...s) AL iC HN EC iON E T AT NC rm VA FO AD iN iD = iD [Cont.] @ 25C VDD = 0.5 VDSS RG =0.6W iD = iD [Cont.] @ 25C MiN TYP 2 ns MAX ...i = 89A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device it...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 52.74K  /  2 Page

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    APT50M60L2VR

ADPOW[Advanced Power Technology]
Part No. APT50M60L2VR
OCR Text ...y AL iC HN EC ON Ti ED AT NC rm VA FO AD iN 500 77 308 30 40 825 5.0 -55 to 150 300 77 50 (Repetitive and Non-Repetitive) 1 4 Volts...i D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 iD[Cont...
Description POWER MOS V 500V 77A 0.060 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 33.79K  /  2 Page

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    APT8014L2FLL

ADPOW[Advanced Power Technology]
Part No. APT8014L2FLL
OCR Text ...s) AL iC HN EC iON E T AT NC rm VA FO AD iN iD = iD [Cont.] @ 25C VDD = 0.5 VDSS RG =0.6W iD = iD [Cont.] @ 25C MiN TYP 2 ns MAX ...i = 52A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device it...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 52.75K  /  2 Page

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    APT8024B2LL APT8024LLL

ADPOW[Advanced Power Technology]
Part No. APT8024B2LL APT8024LLL
OCR Text ... 5 AL iC HN EC iON E T AT NC rm VA FO AD iN VDD = 0.5 VDSS iD = iD[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W iD = iD[Cont.] @ 25C ...i = 31A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device it...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 57.21K  /  2 Page

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    APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR
OCR Text ...y AL iC HN EC ON Ti ED AT NC rm VA FO AD iN 800 33 132 30 40 625 5.0 -55 to 150 300 33 50 (Repetitive and Non-Repetitive) 1 4 Volts...i D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 iD[Cont...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 33A 0.240 Ohm

File Size 39.43K  /  2 Page

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    APT8024B2VR APT8024LVR

ADPOW[Advanced Power Technology]
Part No. APT8024B2VR APT8024LVR
OCR Text ...y AL iC HN EC ON Ti ED AT NC rm VA FO AD iN 800 33 132 30 40 625 5.0 -55 to 150 300 33 50 (Repetitive and Non-Repetitive) 1 4 Volts...i D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 iD[Cont...
Description POWER MOS V 800V 33A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 38.06K  /  2 Page

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    APT8043BFLL APT8043SFLL

ADPOW[Advanced Power Technology]
Part No. APT8043BFLL APT8043SFLL
OCR Text ...s) AL iC HN EC iON E T AT NC rm VA FO AD iN iD = iD [Cont.] @ 25C VDD = 0.5 VDSS RG = 1.6W iD = iD [Cont.] @ 25C MiN TYP 2 ns MAX...i = 29A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device it...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 58.43K  /  2 Page

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    APT8052BFLL APT8052SFLL APT10026JFLL APT8014JFLL

ADPOW[Advanced Power Technology]
Part No. APT8052BFLL APT8052SFLL APT10026JFLL APT8014JFLL
OCR Text ...s) AL iC HN EC iON E T AT NC rm VA FO AD iN iD = iD [Cont.] @ 25C VDD = 0.5 VDSS RG = 1.6W iD = iD [Cont.] @ 25C MiN TYP 2 ns MAX...i = 15A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device it...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.43K  /  2 Page

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