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  rg-55 u Datasheet PDF File

For rg-55 u Found Datasheets File :: 11364    Search Time::3.937ms    
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    ST Microelectronics
Part No. STW8NB100
OCR Text ...nditions VDD = 500V, ID = 3.5 A RG = 4.7, VGS = 10V (see test circuit, Figure 3) VDD = 800V, ID = 7 A, VGS = 10V, RG = 4.7 Min. Typ. 32 13 6...55 3.65 0.14 3 0.07 5 60 0.143 14.80 0.56 1.36 0.21 0.11 15.75 20.15 4.30 0.60 0.78 0.14 0.72 0.58 2...
Description N-CHANNEL 1000V - 1.3 OHM - 7.3A - TO-247 POWERMESH MOSFET

File Size 253.36K  /  9 Page

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    2SJ448

NEC[NEC]
Part No. 2SJ448
OCR Text ...rain ** Starting Tch = 25 C, RG = 25 , VGS = -20 V 0 Gate Body Diode Gate Protection Diode Source Document No. D10029EJ1V0DS00 Date Published May 1995 P Printed in Japan (c) 1995 2SJ448 ELECTRICAL CHARACTERISTICS (...
Description SWITCHING P-CHANNEL POWER MOS FET INDuSTRIAL uSE

File Size 117.41K  /  8 Page

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    2SJ449 2SJ449JM

NEC[NEC]
Part No. 2SJ449 2SJ449JM
OCR Text ...rain ** Starting Tch = 25 C, RG = 25 , VGS = -20 V 0 Gate Body Diode Source Document No. D10030EJ1V0DS00 Date Published May ...55 -4.8 3.5 -100 m100 MAX. 0.8 -5.5 uNIT V S TEST CONDITIONS VGS = -10 V, ID = -3.0 A VDS...
Description Pch vertical DMOS FET MP-45F
SWITCHING P-CHANNEL POWER MOS FET INDuSTRIAL uSE

File Size 116.80K  /  8 Page

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    2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00

NEC[NEC]
Part No. 2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text ...0 A VGS(on) = -10 V VDD = -30 V RG = 10 ID = -20 A VDD = -48 V VGS = -10 V IF = -20 A, VGS = 0 V IF = -20 A, VGS = 0 V di/dt = 50 A / s 1210 520 180 16 140 90 80 42 8.0 10 1.0 125 280 -1.0 5.0 MIN. TYP. 70 120 -1.5 12 -10 # 10 MAX. 100...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDuSTRIAL uSE

File Size 70.31K  /  8 Page

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    2SJ493 D11265EJ3V0DS00

NEC[NEC]
Part No. 2SJ493 D11265EJ3V0DS00
OCR Text ...8 A VGS(on) = -10 V VDD = -30 V RG = 10 ID = -16 A VDD = -48 V VGS = -10 V IF = 16 A, VGS = 0 V IF = 16 A, VGS = 0 V di/dt = 50 A / s 1210 520 180 15 130 95 80 42 8.0 10 1.0 120 230 -1.0 5.0 MIN. TYP. 70 120 -1.5 11 -10 # 10 MAX. 100 1...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDuSTRIAL uSE

File Size 64.87K  /  8 Page

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    2SJ494 D11266EJ2V0DS00

NEC[NEC]
Part No. 2SJ494 D11266EJ2V0DS00
OCR Text ...0 A VGS(on) = -10 V VDD = -30 V RG = 10 : 2360 1060 350 25 160 310 240 74 12 16 1.0 130 290 1.5 -1.0 8.0 MIN. TYP. 39 61 -1.5 15 -10 +10 MAX. 50 88 -2.0 uNIT m: m: V S PA PA pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Switch...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDuSTRIAL uSE

File Size 68.73K  /  8 Page

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    2SJ495 2SJ295 D11267EJ2V0DS00

NEC[NEC]
Part No. 2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text ...5 A VGS(on) = -10 V VDD = -30 V RG = 10 ID = -30 A VDD = -48 V VGS = -10 V IF = 30 A, VGS = 0 IF = 30 A, VGS = 0 di/dt = 100 A/s 4120 1750 580 40 220 600 380 140 12 46 0.8 160 400 1.5 -1.0 12 MIN. TYP. 24 38 -1.5 24 -10 m10 MAX. 30 56 -2.0...
Description From old datasheet system
MOS Field Effect Power Transistors
SWITCHING P-CHANNEL POWER MOS FET INDuSTRIAL uSE

File Size 72.23K  /  8 Page

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    2SJ496

HITACHI[Hitachi Semiconductor]
Part No. 2SJ496
OCR Text ...Ta = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings -60 20 -5 -20 -5 -5 2.14 0.9 150 -55 to +150 unit V V A A A A mJ W C C EAR* Pch* Tch Tstg 2 2SJ496 Electrical Characteri...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 49.68K  /  10 Page

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    2SJ504

HITACHI[Hitachi Semiconductor]
Part No. 2SJ504
OCR Text ... Tc = 25C 3. Value at Ta = 25C, Rg 50 , L=100H 2 2SJ504 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbo...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 50.21K  /  10 Page

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    2SJ505 2SJ505L 2SJ505S

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ505 2SJ505L 2SJ505S
OCR Text ... Tc = 25C 3. Value at Ta = 25C, Rg 50 , L=100H 2 2SJ505(L), 2SJ505(S) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 53.43K  /  10 Page

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For rg-55 u Found Datasheets File :: 11364    Search Time::3.937ms    
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