rg-210 u pdf Datasheet P10 Full Text Search --- IC-ON-LINE


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rg-210 u Datasheet PDF File

For rg-210 u Found Datasheets File :: 1445 Search Time::2.657ms
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				IRF[International Rectifier]
Part No.	IRF7523D1
OCR Text	...-- VDD = 15V -- ID = 1.7A ns -- RG = 6.1 -- RD = 8.7 -- VGS = 0V -- pF VDS = 25V -- = 1.0MHz (see figure 5) Conditions 2 MOSFET Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. units IS Continuous Source Current (B...
Description	FETKY⑩ MOSFET / Schottky Diode(Vdss=30V, Rds(on)=0.11ohm, Schottky Vf=0.39V) FETKY MOSFET / Schottky Diode(Vdss=30V, Rds(on)=0.11ohm, Schottky Vf=0.39V)
File Size	200.05K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPC40FD2
OCR Text	... 27A, VCC = 480V 480 VGE = 15V, RG = 10 320 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 11, 18 6.8 -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 27A, VCC = 480V -- VGE = 15V, RG = 10 -- Energy losses ...
Description	INSuLATED GATE BIPOLAR TRANSISTOR WITH uLTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A)
File Size	381.33K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPC40uD2
OCR Text	...) Q g , T o tal G a te C h a rg e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 2.02 2.00 Total Switching Losses (mJ) 1.98 Total Switchi...
Description	INSuLATED GATE BIPOLAR TRANSISTOR WITH uLTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=20A)
File Size	377.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRH8250 IRH7250
OCR Text	...ing x 0.5 VDD = 100V, ID = 26A, RG = 2.35 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LD LS Gate-to-Source Leakage Forward Gate-to-Sou...210 -- -- -- pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteri...
Description	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
File Size	313.63K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHM8250 IRHM7250 JANSR2N7269 IRHM3250 IRHM4250 JANSF2N7269 JANSG2N7269
OCR Text	...DS = 100V VDD = 100V, ID = 26A, RG = 2.35 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-S...210 -- -- -- pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteri...
Description	200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package RADIATION HARDENED POWER MOSFET THRu-HOLE (TO-254AA)
File Size	266.93K / 12 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SK2984 D12356EJ1V0DS00 2SK2984-ZJ 2SK2984-S 2SK2984-ZJ-E1 2SK2984-ZJ-E1JM
OCR Text	... 20 A VGS(on) = 10 V VDD = 15 V RG = 10 2600 1150 500 70 1100 210 310 65 9.5 12.5 0.8 50 100 1.0 18 MIN. TYP. 6.5 8.5 1.5 36 10 10 MAX. 10 13 2.0 uNIT m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCuIT 1 SWITCHING TIME ...
Description	Low voltage 4V drive power MOSFET SWITCHING N-CHANNEL POWER MOS FET INDuSTRIAL uSE From old datasheet system MOS Field Effect Transistor
File Size	62.55K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. Power MOSFET IRF[International Rectifier]
Part No.	IRFP044N
OCR Text	... VDD = 28V --- I D = 28A ns --- RG = 12 --- RD = 0.98, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of di...210 310 C di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ...
Description	Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=53A) 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.020ohm，身份证\u003d 53A条） 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
File Size	101.37K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFP264N
OCR Text	...- VDD = 30V --- ID = 25A ns --- RG = 1.8 --- VGS = 10V, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 Source-Drain Ratings and Cha...
Description	Power MOSFET(Vdss=250V, Rds(on)=60mohm, Id=44A) Power MOSFET(Vdss=250V Rds(on)=60mohm Id=44A)
File Size	164.76K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRFW614B IRFI614B IRFI614BTuFP001 IRFW614BTMFP001
OCR Text	... 5) VDD = 125 V, ID = 2.8 A, RG = 25 (Note 4, 5) -------- 6.0 30 25 30 8.1 1.4 3.5 22 70 60 70 10.5 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous D...
Description	250V N-Channel B-FET / Substitute of IRFW614A 250V N-Channel MOSFET 250V N-Channel B-FET / Substitute of IRFI614A
File Size	646.54K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPC50F
OCR Text	...tal Sw itching Losses (m J ) RG TC V CC VGE = 2 .0 = 1 50C = 48 0V = 15V 1000 VG E E 20 V G= T J = 12 5C S A FE O P E RA TIN G A RE A 100 15 10 10 5 0 0 20 40 60 80 1 1 10 100 1000 I C , C ollecto r-to-...
Description	INSuLATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=39A)
File Size	231.97K / 6 Page	View it Online	Download Datasheet

For rg-210 u Found Datasheets File :: 1445 Search Time::2.657ms
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