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  rg-140 u Datasheet PDF File

For rg-140 u Found Datasheets File :: 6306    Search Time::1.531ms    
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    2SJ532

HITACHI[Hitachi Semiconductor]
Part No. 2SJ532
OCR Text ...Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Characteristics (Ta = 25C) Item Symbol Min -60 20 -- -- -1.0 -- -- 10 -- -- -- -- -- ...140 -1.0 100 Max -- -- -10 10 -2.0 0.055 0.095 -- -- -- -- -- -- -- -- -- -- unit V V A A V S pF p...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.69K  /  9 Page

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    2SJ543

HITACHI[Hitachi Semiconductor]
Part No. 2SJ543
OCR Text ...Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Characteristics (Ta = 25C) Item Symbol Min -60 20 -- -- -1.0 -- -- 10 -- -- -- -- -- ...140 -1.0 100 Max -- -- -10 10 -2.0 0.055 0.095 -- -- -- -- -- -- -- -- -- -- unit V V A A V S pF p...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.32K  /  9 Page

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    2SJ552 2SJ552L 2SJ552S 2SJ552L/S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ552 2SJ552L 2SJ552S 2SJ552L/S
OCR Text ...Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Characteristics (Ta = 25C) Item Symbol Min -60 20 -- -- -1.0 -- -- 10 -- -- -- -- -- ...140 -1.0 100 Max -- -- -10 10 -2.0 0.055 0.095 -- -- -- -- -- -- -- -- -- -- unit V V A A V S pF p...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
Power switching MOSFET

File Size 55.15K  /  9 Page

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    2SJ559 2SJ559-T1

NEC[NEC]
Part No. 2SJ559 2SJ559-T1
OCR Text ...-3 V ID = -10 mA VGS(on) = -4 V RG = 10 , RL = 300 -1.0 20 23 11 6 5 15 1.3 140 330 220 320 60 23 13 -1.4 MIN. TYP. MAX. -1 uNIT A A V mS pF pF pF ns ns ns ns # 10 -1.7 TEST CIRCuIT SWITCHING TIME D.u.T. RL PG. RG RG = 10 ...
Description Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

File Size 48.29K  /  8 Page

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    2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z
OCR Text ...tarting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V The information in this document is subject to change without notice. Before us...140 160 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 80 60 40 20 0 0 Tc...
Description Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
From old datasheet system
N-ch Power MOS FET

File Size 76.83K  /  8 Page

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    AD620 AD620A AD620ACHIPS AD620AN AD620AR AD620AR-REEL AD620AR-REEL7 AD620B AD620BN AD620BR AD620BR-REEL AD620BR-REEL7 AD

ANALOG DEVICES INC
AD[Analog Devices]
Analog Devices, Inc.
Part No. AD620 AD620A AD620ACHIPS AD620AN AD620AR AD620AR-REEL AD620AR-REEL7 AD620B AD620BN AD620BR AD620BR-REEL AD620BR-REEL7 AD883B AD620SQ883B
OCR Text ...rdip (Q) and SOIC (R) Packages RG -IN +IN -VS 1 2 3 4 8 RG 7 +VS 6 OuTPuT AD620 TOP VIEW 5 REF 1000. Furthermore, the AD620 fe...140 140 0.5 3.0 0.3 1.5 2.0 2.5 1.0 1.5 80 100 120 120 100 120 140 140 0.5 3.0 0.3 1.5 1.0 1.5...
Description Low Drift, Low Power Instrumentation Amp With Set Gains of 1 to 1000
Low Cost, Low Power Instrumentation Amplifier
Precision Instrumentation Amplifier INSTRuMENTATION AMPLIFIER, 150 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8

File Size 571.25K  /  16 Page

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    FCB20N60 FCB20N60TM

FAIRCHILD[Fairchild Semiconductor]
Part No. FCB20N60 FCB20N60TM
OCR Text ..., VGS = 0V VDD = 300V, ID = 20A RG = 25 -----2370 1280 95 65 165 3080 1665 -85 -pF pF pF pF pF Switching Characteristics Turn-On Delay Ti...140 230 65 75 13.5 36 135 290 470 140 98 18 -- ns ns ns ns nC nC nC Drain-Source Diode Char...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 611.95K  /  8 Page

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    FCP20N60 FCPF20N60

Fairchild Semiconductor
Part No. FCP20N60 FCPF20N60
OCR Text ..., VGS = 0V VDD = 300V, ID = 20A RG = 25 -----2370 1280 95 65 165 3080 1665 -85 -pF pF pF pF pF Switching Characteristics Turn-On Delay Ti...140 230 65 75 13.5 36 135 290 470 140 98 18 -- ns ns ns ns nC nC nC Drain-Source Diode Char...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 855.17K  /  10 Page

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    HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723

http://
FAIRCHILD[Fairchild Semiconductor]
INTERSIL[Intersil Corporation]
Fairchild Semiconductor Corporation
Part No. HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723
OCR Text ...ure. 2. VCE = 360V, TC = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES ...140 475 1050 MAX 250 1.0 2.0 2.5 6.0 100 105 135 275 175 0.76 uNITS V A mA V V V nA A A V nC nC ns n...
Description 40A/ 600V/ uFS Series N-Channel IGBTs
40A, 600V, uFS Series N-Channel IGBTs
From old datasheet system
XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN
40 A, 600 V, N-CHANNEL IGBT

File Size 137.79K  /  6 Page

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    HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A
OCR Text ... 2. VCE(PK) = 360V, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS...140 120 100 80 60 40 20 0 0 TJ = 150oC, RG = 10, VGE = 15V, L = 100H 30 20 10 0 25 ...
Description 45 A, 600 V, uFS N-Channel IGBT
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB
45A, 600V, uFS Series N-Channel IGBT 5A00V的,的ufs系列N沟道IGBT

File Size 141.01K  /  8 Page

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