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TOSHIBA
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| Part No. |
JDV4P08U
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| OCR Text |
Radio
* * * High Capacitance Ratio : C1V/C4V = 3.0 (typ.) Low Series Resistance : rs = 0.35 (typ.) The device incorporates two diodes whic...etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics a... |
| Description |
Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio
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| File Size |
89.05K /
4 Page |
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it Online |
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Toshiba, Corp.
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| Part No. |
TA2030FNG
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| OCR Text |
...ich is developed for headphone radio in 1.5v use. it is built in fm f / e and tv f / e (japanese vhf band). features ? built ? in fm ...etc. 2. mode sw it is necessary to connect an external pull ? down resistor with the termina... |
| Description |
TV / FM System F / E (1.5V USE) 电视/调频系统F / E(下1.5V的使用)
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| File Size |
813.04K /
11 Page |
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it Online |
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TOSHIBA
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| Part No. |
HN1V01H
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| OCR Text |
Radio Band Tuning Applications
* * * * High capacitance ratio: C1 V/C8 V = 19.5 (typ.) High Q: Q = 200 (min) Including four devices in FM8 ...etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics a... |
| Description |
Variable Capacitance Diode AM Radio Band Tuning Applications
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| File Size |
77.11K /
3 Page |
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it Online |
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TOSHIBA
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| Part No. |
HN1V02H
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| OCR Text |
Radio Band Tuning Applications
* * * * High capacitance ratio: C1 V/C8 V = 19.5 (typ.) High Q: Q = 200 (min) Including two devices in FM8 p...etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics a... |
| Description |
Variable Capacitance Diode AM Radio Band Tuning Applications
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| File Size |
76.79K /
3 Page |
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it Online |
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Renesas Electronics Corporation
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| Part No. |
NE3510M04-T2
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| OCR Text |
...e applications ? satellite radio (sdars, dmb, etc.) antenna lna ? low noise amplifier for microwave communication system ordering information part number order number pack age quantity marking supplying form ne3510m04 ne3... |
| Description |
L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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| File Size |
206.48K /
12 Page |
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it Online |
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