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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
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Part No. |
K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7P403622B-HC20 K7P403622B K7P403622B-HC16 K7P403622B-HC25 K7P401822B-HC160 K7P403622B-HC200 K7P401822B-HC20T
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OCR Text |
...required on the same address, a partial bypass read operation occurs since the new byte data is from the data in registers while the remaing bytes are from SRAM array.
Sleep Mode
Sleep mode is a low power mode initiated by bringing the ... |
Description |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36 128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36 256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119 128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119 256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119 SENSOR DIFF VACUUM GAGE 1PSI SENSOR ABSOLUTE 0-15PSIA 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
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File Size |
278.02K /
13 Page |
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it Online |
Download Datasheet |
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http:// DYNEX[Dynex Semiconductor] Dynex Semiconductor Ltd. Dynex Semiconductor, Ltd.
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Part No. |
DFM300LXS12-A000
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OCR Text |
...r dissipation Isolation voltage partial discharge Tvj = 125C DC, Tcase = 65C, Tvj = 125C Tcase = 110C, tp = 1ms VR = 0, tp = 10ms, Tvj = 125C Tcase = 25C, Tvj = 125C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 1200V,... |
Description |
Fast Recovery Diode Module Preliminary Information 300 A, 1200 V, SILICON, RECTIFIER DIODE
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File Size |
92.11K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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