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ohm-200 Datasheet PDF File

For ohm-200 Found Datasheets File :: 14673 Search Time::2.235ms
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				MACOM[Tyco Electronics]
Part No.	MRF175GU1111 MRF175GV
OCR Text	...former. T1 -- Can Be Made of 25 Ohm Semirigid T1 -- Co-Ax, 47-62 Mils O.D. T2 -- 1:4 Impedance Ratio RF Transformer. T2 -- Can Be Made of 25...200 C19 -- 10 F 100 V Tantalum Cap L1, L2 -- Hairpin Inductor #18 W L3, L4 -- Hairpin Inductor #18 W...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	205.41K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF175GU MRF175GV
OCR Text	... -- 100 Ohms, 1/2 W R2 -- 1.0 k Ohm, 1/2 W T1 -- 4:1 Impedance Ratio RF Transformer. T1 -- Can Be Made of 25 Ohm Semirigid Coax, T1 -- 47 - ...200 Figure 2. 400 MHz Test Circuit MOTOROLA RF DEVICE DATA MRF175GU MRF175GV 3 TYPICAL C...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	183.29K / 8 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175GV MRF175GU
OCR Text	... -- 100 Ohms, 1/2 W R2 -- 1.0 k Ohm, 1/2 W T1 -- 4:1 Impedance Ratio RF Transformer. T1 -- Can Be Made of 25 Ohm Semirigid Coax, T1 -- 47-52...200 Figure 2. 400 MHz Test Circuit REV 8 3 TYPICAL CHARACTERISTICS 4000 f T, UNITY GAIN...
Description	From old datasheet system N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	210.44K / 11 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF176 MRF176GU MRF176GV
OCR Text	...former. T1 -- Can Be Made of 25 Ohm Semirigid T1 -- Co-Ax, 47 - 62 Mils O.D. T2 -- 1:4 Impedance Ratio RF Transformer. T2 -- Can Be Made of ...200 C19 -- 10 F 100 V Tantalum Cap L1, L2 -- Hairpin Inductor #18 W L3, L4 -- Hairpin Inductor #18 W...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	176.10K / 10 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18030A MRF18030ALR3 MRF18030ALSR3
OCR Text	...L CHARACTERISTICS (TC = 25C, 50 ohm system unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain - Source Breakdown Voltage (VGS...200 mA 13 12 11 10 0.1 1 10 Pout, OUTPUT POWER (WATTS) 100 mA VDD = 26 Vdc f = 1840 MHz T = 25_C 100...
Description	SEE A3282EUA-T CHOPPER STABILIZED LATCH W/TIN PLATING SEE A3282ELHLT-T RF Power Field Effect Transistors
File Size	504.66K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
OCR Text	...S (In Motorola Test Fixture, 50 ohm system) Common-Source Amplifier Power Gain @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 - 1880 MHz) Drain Efficiency @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 - 1880 MHz) Input Return Loss (2) ...
Description	MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
File Size	399.98K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text	...S (In Motorola Test Fixture, 50 ohm system) Common - Source Amplifier Power Gain @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz) Drain Efficiency @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz) Input Return Loss (2...
Description	HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes RF Power Field Effect Transistors
File Size	486.59K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18085B MRF18085BLSR3 MRF18085BR3
OCR Text	...S (In Motorola Test Fixture, 50 ohm system) Common - Source Amplifier Power Gain @ 85 W (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) Dr...200 kHz Span 2 MHz Figure 11. EDGE Spectrum at 40 Watts (Avg.) Output Power MRF18085BR3 MRF180...
Description	RF Power Field Effect Transistors
File Size	607.07K / 12 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc]
Part No.	MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D
OCR Text	...AMPERES 250 VOLTS RDS(on) = 1.0 OHM (R) D CASE 369A-13, Style 2 DPAK G S MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating ...200 Vdc, ID = 5.0 Adc, VGS = 10 Vdc) (VDD = 125 Vdc, ID = 5.0 Adc, VGS = 10 Vdc, RG = 9.1 ) td(on) t...
Description	TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM From old datasheet system
File Size	252.63K / 10 Page	View it Online	Download Datasheet

				MOTOROLA INC Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTD5P06E
OCR Text	...AMPERES 60 VOLTS RDS(on) = 0.55 OHM (R) D G S CASE 369A-13, Style 2 DPAK Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 60 6...200 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 400 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) ...
Description	TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM
File Size	207.75K / 10 Page	View it Online	Download Datasheet

For ohm-200 Found Datasheets File :: 14673 Search Time::2.235ms
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