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For non-flange Found Datasheets File :: 2761    Search Time::1.828ms    
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    FDB050AN06A0 FDP050AN06A0 FDP050AN06A0NL

FAIRCHILD[Fairchild Semiconductor]
Part No. FDB050AN06A0 FDP050AN06A0 FDP050AN06A0NL
OCR Text ...w and board orientation. 6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. Fairchild provides thermal information to assist the d...
Description Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-263AB
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-220AB

File Size 498.80K  /  11 Page

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    FDB10AN06A0 FDP10AN06A0

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FDB10AN06A0 FDP10AN06A0
OCR Text ...w and board orientation. 6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. Fairchild provides thermal information to assist the d...
Description CAP 0.1UF 50V 5% X7R SMD-1206 TR-7-PA SN100
N-Channel PowerTrench MOSFET 60V/ 75A/ 10.5m
N-Channel PowerTrench MOSFET 60V, 75A, 10.5mз
N-Channel PowerTrench MOSFET 60V, 75A, 10.5mOhm

File Size 202.02K  /  11 Page

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    FDB8896 FDB8896NL

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. FDB8896 FDB8896NL
OCR Text ...w and board orientation. 6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. Fairchild provides thermal information to assist the d...
Description N-Channel PowerTrench MOSFET 30V, 93A, 5.7 m ohm
30V N-Channel PowerTrench MOSFET 80 A, 30 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

File Size 203.81K  /  11 Page

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    FDD10AN06A0

FAIRCHILD[Fairchild Semiconductor]
Part No. FDD10AN06A0
OCR Text ...w and board orientation. 6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. Fairchild provides thermal information to assist the d...
Description N-Channel PowerTrench MOSFET 60V, 50A, 10.5mOhm
N-Channel PowerTrench MOSFET 60V, 50A, 10.5mз
N-Channel PowerTrench MOSFET 60V/ 50A/ 10.5m

File Size 172.63K  /  11 Page

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    FDP13AN06A FDP13AN06A0 FDB13AN06A0 FDB13AN06A0NL

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. FDP13AN06A FDP13AN06A0 FDB13AN06A0 FDB13AN06A0NL
OCR Text ...w and board orientation. 6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. Fairchild provides thermal information to assist the d...
Description N-Channel PowerTrench MOSFET 60V, 62A, 13.5mohm
N-Channel PowerTrench MOSFET 60V/ 62A/ 13.5m
N-Channel PowerTrench MOSFET, 60V, 62A, 0.0135 Ohms 62 A, 60 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel PowerTrench MOSFET 60V, 62A, 13.5mз 62 A, 60 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 236.21K  /  11 Page

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    RA07N4047M RA07N4047M-01 RA07N4047M-E01

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. RA07N4047M RA07N4047M-01 RA07N4047M-E01
OCR Text ...mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current ...flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor ch...
Description MITSUBISHI RF MOSFET MODULE 三菱射频MOSFET模块
30V N-Channel PowerTrench MOSFET

File Size 61.24K  /  9 Page

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    RA35H1516M RA35H1516M-01 RA35H1516M-E01

Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
Part No. RA35H1516M RA35H1516M-01 RA35H1516M-E01
OCR Text ...mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current ...flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor ch...
Description 154-162MHz 40W 12.5V MOBILE RADIO 154 - 162MHz功率40W 12.5V移动通信
154 MHz - 162 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

File Size 74.15K  /  8 Page

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    20CJQ060

International Rectifier
Part No. 20CJQ060
OCR Text ... typical Max. Peak One Cycle Non-Repetitive Surge Current (Per Leg) * See Fig. 7 Non-Repetitive Avalanche Energy (Per Leg) Repetitive Ava...FLANGE DISTORTION @ OUTER EDGE. 18.40 (.724) MAX. 14.40 (.566) 12.40 (.488) 4 3 Data and...
Description SCHOTTKY RECTIFIER 2 Amp

File Size 200.50K  /  5 Page

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    FDD107AN06LA0

Fairchild Semiconductor Corporation
Part No. FDD107AN06LA0
OCR Text ...w and board orientation. 6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. Fairchild provides thermal information to assist the d...
Description N-Channel PowerTrench MOSFET 60V, 10A, 107m
From old datasheet system
60V N-Channel PowerTrench MOSFET

File Size 162.32K  /  11 Page

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    MGFS45V2325 S452325

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. MGFS45V2325 S452325
OCR Text ... auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. Tstg Storage temperature *1 : Tc=25C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol VGS (off) P1dB GLP ID add IM3 Rth (ch-c) Par...
Description 2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应
From old datasheet system
2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET

File Size 26.63K  /  2 Page

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For non-flange Found Datasheets File :: 2761    Search Time::1.828ms    
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