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  nanosecond Datasheet PDF File

For nanosecond Found Datasheets File :: 979    Search Time::2.406ms    
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    MUR180E MUR180ERL MUR1100ERL MUR1100E

ONSEMI[ON Semiconductor]
Part No. MUR180E MUR180ERL MUR1100ERL MUR1100E
OCR Text ...tive Load Circuits Ultrafast 75 nanosecond Recovery Time 175C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 1000 Volts ULTRAFAST RECTIFIERS 1.0 AMPERE...
Description TIP REPL BEVEL .016 SP200-500 1 A, 1000 V, SILICON, SIGNAL DIODE
SWITCHMODE Power Rectifiers
1A 800V Ultrafast Rectifier

File Size 83.00K  /  8 Page

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    MUR260 MUR260RL

ONSEMI[ON Semiconductor]
Part No. MUR260 MUR260RL
OCR Text ...s: * * * * * Ultrafast 50 nanosecond Recovery Times 175C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction http://onsemi.com Mechanical Characteristics ULTRAFAST...
Description SWITCHMODE Power Rectifier

File Size 57.58K  /  8 Page

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    MX-850MC MX-850MM MX-850 MX-850MM-QL

Murata Power Solutions Inc.
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Murata Manufacturing Co., Ltd.
Datel
Part No. MX-850MC MX-850MM MX-850 MX-850MM-QL
OCR Text ...rformance benchmarks are its 50 nanosecond maximum settling time to 0.01% accuracy and its unprecedented 0.001% accuracy specification. Packaged in a miniature, 14-pin, ceramic DIP, the MX-850 operates from 15V and +5V supplies and consumes...
Description Precision, Higher-Speed 4-Channel, Analog Multiplexers 精密,更高速度通道,模拟多路复用器
Precision Higher-Speed 4-Channel Analog Multiplexers

File Size 79.91K  /  4 Page

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    ISB35000 ISB35083 ISB35130 ISB35166

STMicroelectronics
Part No. ISB35000 ISB35083 ISB35130 ISB35166
OCR Text ...5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equivalent usable gates. The array operates over a Vdd volta...
Description HCMOS STRUCTURED ARRAY

File Size 276.47K  /  15 Page

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    RFP22N10 RF1S22N10SM FN2385

INTERSIL[Intersil Corporation]
Part No. RFP22N10 RF1S22N10SM FN2385
OCR Text ... is Power Dissipation Limited * nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * 175oC Operating Temperature * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"...
Description From old datasheet system
22A 100V 0.080 Ohm N-Channel Power MOSFETs
22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs
22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs

File Size 48.55K  /  6 Page

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    UBD600 UBD650 UBT12.0 UNI-IMPS UBD2.0 UBD2.5 UGT7.5 UBD1.0 UBD1.2 UBD1.5 UBD3.0 UBD4.0 UBD550 UBD750 UBD850 UBT10.0 UBT1

http://
CLARE[Clare, Inc.]
Clare Inc
Part No. UBD600 UBD650 UBT12.0 UNI-IMPS UBD2.0 UBD2.5 UGT7.5 UBD1.0 UBD1.2 UBD1.5 UBD3.0 UBD4.0 UBD550 UBD750 UBD850 UBT10.0 UBT15.0 UBT20.0 UBT4.0 UBT5.0 UBT6.0 UBT7.5 UGT10.0 UGT12.0 UGT15.0 UGT20.0 UGT4.0 UGT5.0 UGT6.0
OCR Text ...unction process that results in nanosecond response times combined with peak current ratings in excess of 20kA. A unique benefit of this technology is that the breakdown voltage is virtually independent of the rise time of the transient. In...
Description HIGH-SPEED TRANSIENT SURGE PROTECTORS 高速瞬态浪涌保护器

File Size 91.56K  /  3 Page

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    RFP2N10L RFP2N08L FN2872

INTERSIL[Intersil Corporation]
Part No. RFP2N10L RFP2N08L FN2872
OCR Text ... is Power Dissipation Limited * nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance Ordering Information PART NUMBER RFP2N08L RFP2N10L PACKAGE TO-220AB TO-220AB BRAND RFP2N08L RFP2N10L * Majority Carr...
Description From old datasheet system
2A/ 80V and 100V/ 1.050 Ohm/ Logic Level/ N-Channel Power MOSFETs
2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs

File Size 35.01K  /  5 Page

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    RFP2N10 RFP2N08

INTERSIL[Intersil Corporation]
Part No. RFP2N10 RFP2N08
OCR Text ... is Power Dissipation Limited * nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" ...
Description 2A 80V and 100V 1.05 Ohm N-Channel Power MOSFETs
2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs
2A/ 80V and 100V/ 1.05 Ohm/ N-Channel Power MOSFETs

File Size 46.27K  /  4 Page

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    AMS2026 AMS2026P AMS2026S

Advanced Monolithic Sys...
ADMOS[Advanced Monolithic Systems]
Part No. AMS2026 AMS2026P AMS2026S
OCR Text ...e instead of the microsecond or nanosecond range for a standard FET. Enable A logic high on the /EN input turns off the power switch and the bias for the charge pump, driver, and other circuitry to reduce the supply current to less than 10A...
Description DUAL POWER DISTRIBUTION SWITCH

File Size 50.06K  /  5 Page

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    AMS2027 AMS2027P AMS2027S

Advanced Monolithic Sys...
ADMOS[Advanced Monolithic Systems]
Advanced Monolithic Systems, Inc.
Part No. AMS2027 AMS2027P AMS2027S
OCR Text ...e instead of the microsecond or nanosecond range for a standard FET. Enable A logic high on the /EN input turns off the power switch and the bias for the charge pump, driver, and other circuitry to reduce the supply current to less than 10A...
Description SINGLE POWER DISTRIBUTION SWITCH

File Size 45.27K  /  5 Page

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For nanosecond Found Datasheets File :: 979    Search Time::2.406ms    
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