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ms-187 Datasheet PDF File

For ms-187 Found Datasheets File :: 2131 Search Time::1.156ms
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				SANYO[Sanyo Semicon Device]
Part No.	VEC2901
OCR Text	... ou 10 s s 0 0 50 nt ms ed 0m 0.8 on s ac er am ic tio 0.6 bo n ar d (9 00 0.4 m m2 ! 0. 8m 0.01 0.1 Ta=25C Single Pulse Mounted on a ceramic board (900mm2!0...
Description	Switching Flash Applications Switching, Flash Applications
File Size	50.62K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc]
Part No.	MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D
OCR Text	...ltage -- Non-Repetitive (tp 10 ms) Drain Current -- Continuous Drain Current -- Continuous @ 100C Drain Current -- Single Pulse (tp 10 s) ...187 72 2030 400 160 pF VGS(th) 2.0 -- RDS(on) VDS(on) -- -- gFS 2.0 8.24 -- 4.3 12 10 -- mhos -- 3.0...
Description	TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS From old datasheet system
File Size	156.99K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTB4N80E_D ON2428 ON2426 MTB4N80E
OCR Text	...ltage -- Non-Repetitive (tp 10 ms) Drain Current -- Continuous Drain Current -- Continuous @ 100C Drain Current -- Single Pulse (tp 10 s) ...187 72 2030 400 160 pF VGS(th) 2.0 -- RDS(on) VDS(on) -- -- gFS 2.0 8.24 -- 4.3 12 10 -- mhos -- 3.0...
Description	TMOS POWER FET 4.0 AMPERES 800 VOLTS 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system
File Size	191.71K / 10 Page	View it Online	Download Datasheet

				ON Semiconductor Motorola, Inc Motorola Mobility Holdings, Inc.
Part No.	MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E-D
OCR Text	...ltage -- Non-Repetitive (tp 10 ms) Drain Current -- Continuous Drain Current -- Continuous @ 100C Drain Current -- Single Pulse (tp 10 s) ...187 72 2030 400 160 pF VGS(th) 2.0 -- RDS(on) VDS(on) -- -- gFS 2.0 8.24 -- 4.3 12 10 -- mhos -- 3.0...
Description	TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM TMOS是功率场效应晶体.0安培800伏特的RDSon）\u003d 3.0欧姆
File Size	155.71K / 8 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	NE3210S01 NE3210S01-T1 NE3210S01-T1B
OCR Text	...0 -2.0 - 0.45 - Unit A mA V mS dB dB 2 Data Sheet P14067EJ2V0DS00 NE3210S01 TYPICAL CHARACTERISTICS (TA = +25 C) TOTAL POWER ...187 0.157 0.123 0.110 0.125 0.161 0.207 0.255 0.299 0.329 0.343 0.347 S22 ANG. -15.2 -19.9 -25.2 -30...
Description	Low Noise Amplifier N-Channel HJ-FET(低噪声N沟道结型场效应管) 低噪声放大器N沟道黄建忠场效应管（低噪沟道结型场效应管 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
File Size	60.47K / 16 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	NE334S01 NE334S01-T1 NE334S01-T1B
OCR Text	... = 15 mA, f = 4 GHz mA mA V mS -0.2 70 -0.9 85 0.25 16.0 -2.5 0.35 dB dB 2 NE334S01 TYPICAL CHARACTERISTICS (TA ...187 3.997 3.812 3.628 3.477 3.351 3.251 3.150 3.036 2.875 2.714 2.546 2.418 2.327 2.240 2.168 2.100 ...
Description	C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET C波段超低噪声放大器N沟道黄建忠场效应
File Size	72.14K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BT169B BT169G BT169 BT169D BT169G112 BT169G126
OCR Text	...urge; see Figure 2 and 3 t = 10 ms t = 8.3 ms I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj [1] [1] [1] [1] Conditions Min - Max 200...187 . (1) Tj = 125 C; typical values. (2) Tj = 125 C; maximum values. (3) Tj = 25 C; maximum values....
Description	Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Ammo pack axial radial taped 0.8 A, 600 V, SCR, TO-92 Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Bulk pack 0.8 A, 600 V, SCR, TO-92
File Size	56.99K / 12 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	BUR51 4420
OCR Text	...ollector Peak Current (t p = 10 ms) Base Current Total Dissipation at T c 25 C Storage Temperature Max. Operating Junction Temperature o ...187 0.429 0.665 inch TYP. 0.461 0.059 MAX. 0.516 0.063 0.115 0.370 0.787 0.437 0.677 1.024 0.165 1.5...
Description	HIGH CURRENT NPN SILICON TRANSISTOR From old datasheet system
File Size	64.30K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRPT1065A
OCR Text	... TA = 40C, RthSA = 1.16C/W 10 ms half-cycle, non-repetitive surge defined by external PWM control Vin = 220V AC, fpwm = 4 kHz, fo = 60 Hz,...187 [4.75] .175 [4.45] B .000 [ 0.00] 2X R .250 [6.35] 4X O .260 [6.60] PIN CENTER 1.020 [2...
Description	Power Module for 1 hp Motor Drives
File Size	193.02K / 12 Page	View it Online	Download Datasheet

				IXYS, Corp. IXYS[IXYS Corporation]
Part No.	IXFT16N90Q IXFH16N90Q IXFK16N90Q
OCR Text	... TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C Maximum Ratings 900 900 20 30 16 64 16 45 1.5 5 360 -55 ... +1...187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 ...
Description	HiPerFET Power MOSFETs Q-Class 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
File Size	71.33K / 2 Page	View it Online	Download Datasheet

For ms-187 Found Datasheets File :: 2131 Search Time::1.156ms
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