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MOTOROLA[Motorola, Inc]
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| Part No. |
MGP21N60E
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| OCR Text |
...OS Motorola, Inc. 1997
Power MOSFET Transistor Device Data
1
MGP21N60E
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 A... |
| Description |
Insulated Gate Bipolar Transistor
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| File Size |
123.84K /
6 Page |
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it Online |
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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
MGW12N120D
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| OCR Text |
...OS Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1
MGW12N120D
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 ... |
| Description |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
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| File Size |
250.62K /
6 Page |
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it Online |
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MOTOROLA INC
MOTOROLA[Motorola, Inc]
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| Part No. |
MGW12N120
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| OCR Text |
...OS Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1
MGW12N120
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 A... |
| Description |
Insulated Gate Bipolar Transistor
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| File Size |
228.81K /
6 Page |
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it Online |
Download Datasheet |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MGY30N60D
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| OCR Text |
...OS Motorola, Inc. 1995
Power MOSFET Transistor Device Data
1
MGY30N60D
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 ... |
| Description |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
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| File Size |
254.37K /
6 Page |
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it Online |
Download Datasheet |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MGY40N60D
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| OCR Text |
...OS Motorola, Inc. 1995
Power MOSFET Transistor Device Data
1
MGY40N60D
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 ... |
| Description |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
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| File Size |
246.87K /
6 Page |
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it Online |
Download Datasheet |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MGY40N60
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| OCR Text |
...OS Motorola, Inc. 1995
Power MOSFET Transistor Device Data
1
MGY40N60
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 A... |
| Description |
Insulated Gate Bipolar Transistor
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| File Size |
205.43K /
6 Page |
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it Online |
Download Datasheet |
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SGS Thomson Microelectronics
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| Part No. |
AN658
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| OCR Text |
...r low voltage applications, the mosfet is interesting, as the die size is very small (and so the device is cheap). however for higher breakdown voltages, the igbt is more suitable, as i switch v switch i diode diode fwd voltage i diode l r... |
| Description |
RESONANT CONVERTER TOPOLOGIES
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| File Size |
34.29K /
5 Page |
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it Online |
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SEMIKRON[Semikron International]
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| Part No. |
SKHI61
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| OCR Text |
...
SEMIDRIVERTM Sixpack IGBT and MOSFET Driver
SKHI 61
VCE dv/dt VisolIO Visol12 RGonmin RGoffmin Qout/pulse Top Tstg
Features
* CMOS-compatible input buffers at VDD=5V * Short-circuit protection by VCE-monitoring and Soft-turn-Off *... |
| Description |
Sixpack IGBT and MOSFET Driver
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| File Size |
163.67K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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