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SGS Thomson Microelectronics
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| Part No. |
STU8NC90Z STU8NC90ZI
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| OCR Text |
...ymbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs = 0 900 v d bv dss / d t j ...10v, i d = 3.8a 1.1 1.38 w i d(on) on state drain current v ds >i d(on) xr ds(on)max, v gs =10v 7a s... |
| Description |
N-CHANNEL 900V 1.1 OHM 7.6A MAX220 / I-MAX220 ZENER-PROTECTED POWERMESH III MOSFET
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| File Size |
119.94K /
10 Page |
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it Online |
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Infineon
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| Part No. |
SKB06N60HS
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| OCR Text |
...lue parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =500 ...10v 100v 1000v 0,1a 1a 10a 8s t p =4s 15s 200s 1ms 50s dc f , switching frequency v ce , collector... |
| Description |
IGBTs & DuoPacks - 6A 600V TO263 IGBT Diode
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| File Size |
422.36K /
14 Page |
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it Online |
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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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| Part No. |
SN7002W
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| OCR Text |
... footprint RthJS 250 K/W Symbol min. Values typ. max. Unit
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter...10V, ID=0.23A
Page 2
2003-04-03
Final data
SN7002W
Electrical Characteristics, at T j =... |
| Description |
SIPMOS Small-Signal-Transistor Low Voltage MOSFETs - SOT323, 60V, 5Ohm, 0.23A
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| File Size |
113.32K /
8 Page |
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it Online |
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Price and Availability
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