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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ...ngle P ulse A valanche E nergy (m j) TO P 1000 1 5V B O TTO m ID 11 A 2 0A 28 A VDS L D R IV E R 800 600 RG 20V tp D .U .T IA S + V - DD A 400 0 .0 1 Fig 12a. Unclamped Inductive Test Circu...
Description Power mOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率mOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power mOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power mOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)

File Size 180.61K  /  10 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ...6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mj V/ns C Thermal Resistance Parameter RjC RCS RjA junction-to-Case Case-to-Si...j = 175C 10.00 2.0 (Normalized) 1.5 T j = 25C 1.00 1.0 0.5 0.10 3.0 4.0 5.0 ...
Description Power mOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率mOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power mOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power mOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...D = 1mA 6.0 VGS = 10V, ID = 15A m 8.5 VGS = 4.5V, ID = 12A 3.0 V VDS = VGS, ID = 250A 20 VDS = 16V, VGS = 0V A 100 VDS = 16V, VGS = 0V, Tj =...j = P Dm x Z thjC + TC 0.001 0.01 0.1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (...
Description Power mOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power mOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power mOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power mOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power mOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    IRF3717

IRF[International Rectifier]
Part No. IRF3717
OCR Text ... V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 20A V VGS = 4.5V, ID = 16A VDS = VGS, ID = 250A e e mV/C A VDS = 16V, VGS = 0V nA S ...j = 150C RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current () ...
Description HEXFETPower mOSFET

File Size 246.14K  /  10 Page

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ... V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 75A V V A VDS = VGS, ID = 250A VDS = 25V, ID = 75A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V...j 1 2 R2 R2 C 2 0.01 j Ri (C/W) i (sec) 0.11 0.001016 0.097 0.012816 1 0.001 Ci= ...
Description AUTOmOTIVE mOSFET

File Size 358.50K  /  12 Page

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ... Reference to 25C, ID = 1mA 7.0 m VGS = 10V, ID = 82A T 4.0 V VDS = 10V, ID = 250A --- S VDS = 25V, ID = 82A 20 VDS = 75V, VGS = 0V A 250 VD...j= 25 C 10 100 1 0.1 1 20s PULSE WIDTH T j= 175 C 10 100 V DS, Drain-to-Source Voltag...
Description 75V Single N-Channel HEXFET Power mOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power mOSFET in a TO-262 package
AUTOmOTIVE mOSFET
Power mOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power mOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power mOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power mOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率mOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

File Size 159.77K  /  11 Page

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ...6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mj A mj V/ns C Thermal Resistance Parameter RjC RCS RjA junction-to-Case Case-to...j= 25 C 10 100 1 0.1 1 20s PULSE WIDTH T j= 175 C 10 100 V DS, Drain-to-Source Voltag...
Description 75V Single N-Channel HEXFET Power mOSFET in a TO-220AB package
Power mOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power mOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power mOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

File Size 129.31K  /  9 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...s e A va la n c h e E n e rg y (m j) TO P 2000 BOT TO m ID -1 6A - 27A -38 A RG D .U .T IA S D R IV E R 0.01 VD D A - 20V tp 1500 1000 15V 500 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100...
Description Power mOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率mOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power mOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power mOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power mOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ...6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mj A mj V/ns C Thermal Resistance Parameter RjC RCS RjA junction-to-Case Case-to...j = 150C 100 V GS = 20V nA -100 VGS = -20V 180 ID = -38A 32 nC VDS = -44V 86 V GS = -10V, See Fig. 6...
Description Power mOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率mOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power mOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...ngle P ulse A valanche E nergy (m j) TO P 600 B O TTO m 500 ID -6 .6A -1 1A -16 A RG D .U .T IA S D R IV E R 0 .0 1 VD D A -2 0 V tp 400 300 15V 200 Fig 12a. Unclamped Inductive Test Circuit 100 ...
Description Power mOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power mOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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