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    STGW60H65DF

ST Microelectronics
STMicroelectronics
Part No. STGW60H65DF
OCR Text ...etween conduction and switching losses, maximizing the efficiency of high switching frequency converters. furthermore, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in easier parall...
Description 60 A, 650 V field stop trench gate IGBT with very fast diode

File Size 1,896.92K  /  13 Page

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    RJK03E5DPA-00-J5A RJK03E5DPA13

Renesas Electronics Corporation
Part No. RJK03E5DPA-00-J5A RJK03E5DPA13
OCR Text ...umes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this docume...
Description Built in SBD N Channel Power MOS FET High Speed Power Switching

File Size 137.82K  /  7 Page

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    TZ375N

eupec GmbH
Part No. TZ375N
OCR Text ...culation base p tav (switching losses should be considered separately) parameter: stromflu?winkel / current conduction angle 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 i tav [a] dc 180 120 90 60 = 30 0 0 180 ...
Description Netz-Thyristor-Modul Phase Control Thyristor Module

File Size 445.31K  /  13 Page

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    M30260F6AGPU5A

Renesas Electronics Corporation
Part No. M30260F6AGPU5A
OCR Text ...sumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this document, you should comply with the...
Description Old Company Name in Catalogs and Other Documents

File Size 313.39K  /  30 Page

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    NP60N04KUG-E1-AY

Renesas Electronics Corporation
Part No. NP60N04KUG-E1-AY
OCR Text ...sumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this doc ument, you should comply with t...
Description Old Company Name in Catalogs and Other Documents

File Size 272.60K  /  9 Page

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Part No. RKZ30-1KD
OCR Text ...sumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this document, you should comply with the...
Description 28.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

File Size 113.00K  /  10 Page

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    IRF6633TRPBF IRF6633PBF

International Rectifier
Part No. IRF6633TRPBF IRF6633PBF
OCR Text ... both conduction an d switching losses. the reduced total losses make this product ideal for high efficiency dc-dc converters that power the latest g eneration of processors operating at higher frequencies. the irf6633pbf has been optimize...
Description DirectFETPower MOSFET

File Size 274.31K  /  10 Page

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Part No. UPC324GR5-9LG-E1-A UPC324GR5-9LG-E2-A
OCR Text ...sumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this doc ument, you should comply with t...
Description QUAD OP-AMP, 3000 uV OFFSET-MAX, PDSO14

File Size 315.19K  /  12 Page

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    NTMFS4C10N NTMFS4C10NT1G NTMFS4C10NT3G

ON Semiconductor
Part No. NTMFS4C10N NTMFS4C10NT1G NTMFS4C10NT3G
OCR Text ... ds(on) to minimize conduction losses ? low capacitance to minimize driver losses ? optimized gate charge to minimize switching losses ? these devices are pb ? free, halogen free/bfr free and are rohs compliant applications ? cpu power del...
Description Power MOSFET 30 V, 46 A, Single N?Channel, SO? FL

File Size 114.75K  /  7 Page

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